Phase change memory unit structure, phase change memory unit and its forming method

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change elem...

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Main Author ARNOLD JOHN C.,CLEVENGER LAWRENCE A.,DALTON TIMOTHY J.,GAIDIS MICHAEL C.,HSU LOUIS L.,RADENS CARL J.,WONG KEITH K. H.,YANG CHIHAO
Format Patent
LanguageEnglish
Published 03.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change element thereby reducing the contact area between the phase change element and one of the electrodes thereby increasing the current density through the phase change element and effectively inducing the phase change at a first programming power.
AbstractList A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change element thereby reducing the contact area between the phase change element and one of the electrodes thereby increasing the current density through the phase change element and effectively inducing the phase change at a first programming power.
Author ARNOLD JOHN C.,CLEVENGER LAWRENCE A.,DALTON TIMOTHY J.,GAIDIS MICHAEL C.,HSU LOUIS L.,RADENS CARL J.,WONG KEITH K. H.,YANG CHIHAO
Author_xml – fullname: ARNOLD JOHN C.,CLEVENGER LAWRENCE A.,DALTON TIMOTHY J.,GAIDIS MICHAEL C.,HSU LOUIS L.,RADENS CARL J.,WONG KEITH K. H.,YANG CHIHAO
BookMark eNrjYmDJy89L5WQIDshILE5VSM5IzEtPVchNzc0vqlQozcssUSguKSpNLiktStVRKMClJjEvRSGzpFghLb8oNzMvHShXkpGfwsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA0MDUzMjYwNHI2JUQMAd5w57w
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID CN101047230A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN101047230A3
IEDL.DBID EVB
IngestDate Fri Jul 19 14:47:15 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN101047230A3
Notes Application Number: CN200710089144
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071003&DB=EPODOC&CC=CN&NR=101047230A
ParticipantIDs epo_espacenet_CN101047230A
PublicationCentury 2000
PublicationDate 20071003
PublicationDateYYYYMMDD 2007-10-03
PublicationDate_xml – month: 10
  year: 2007
  text: 20071003
  day: 03
PublicationDecade 2000
PublicationYear 2007
RelatedCompanies IBM
RelatedCompanies_xml – name: IBM
Score 2.6840918
Snippet A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Phase change memory unit structure, phase change memory unit and its forming method
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071003&DB=EPODOC&locale=&CC=CN&NR=101047230A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSTZJS0pMMzLWBVb-wA6KZaKhrqVZkqVuSpqZQTK4jgGf0-3rZ-YRauIVYRrBxJAF2wsDPie0HHw4IjBHJQPzewm4vC5ADGK5gNdWFusnZQKF8u3dQmxd1GC9Y9BZNcZqLk62rgH-Lv7Oas7Ots5-an5BwLYu6EwCYHvbkZmBFdiMNgflBtcwJ9CulALkKsVNkIEtAGhaXokQA1NqnjADpzPs5jVhBg5f6IQ3kAnNe8UiDMEBGcAaRwGyU1chF7RCtlKhFJgjFSBnwJYWpeooFOBSk5iXopBZUqwAaqMCaysFyM3RogyKbq4hzh66QNfFw4Mi3tkP4RFjMQaWvPy8VAkGBeNkYC1jmGaYamCWBKyVkpIMLIApxCIR2JhKMrRMMZdkkMJtjhQ-SWkGLvBoJmjK3FiGgQXooVRZYDVckiQHDj8AW6yMRw
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1dT4MwFL2Z0zjfdGp0ftXE8CRxyGTjgRhXIFMHI4pmb4TyEWciI8Ji_Pfels35Mt8aShra9HBO23tPAS6iTsrC9FqVkfxxgaKHiqxrTJfjVGtHgmOET7fjaoOXzsP4ZlyD90UujPAJ_RLmiIioCPFeiv91vtzEMkVsZXHFJvhoemv7hiktVsfcq0aVzL5heSNzRCVKDepK7hNqXe5JgHr7bg3WUWJ3ORqs1z7PSsn_Uoq9DRsetpaVO1BLsiY06OLmtSZsOvMDbyzOsVfswrP3hoxDqkxd8sEjZL_JDBFJKg_Y2WdySfJV74RZTCZlQbhGRbYi1c3Re3BuWz4dyPh1we9QBNRddkTdh3o2zZIDIGqELKOkStLWGLISY-0ezpBeiGKKKXrcPYTW6nZa_1WeQWPgO8NgeO8-HsGW2Nnkx-fqMdSxc8kJUnLJTsVY_gAcW486
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Phase+change+memory+unit+structure%2C+phase+change+memory+unit+and+its+forming+method&rft.inventor=ARNOLD+JOHN+C.%2CCLEVENGER+LAWRENCE+A.%2CDALTON+TIMOTHY+J.%2CGAIDIS+MICHAEL+C.%2CHSU+LOUIS+L.%2CRADENS+CARL+J.%2CWONG+KEITH+K.+H.%2CYANG+CHIHAO&rft.date=2007-10-03&rft.externalDBID=A&rft.externalDocID=CN101047230A