Phase change memory unit structure, phase change memory unit and its forming method

A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change elem...

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Bibliographic Details
Main Author ARNOLD JOHN C.,CLEVENGER LAWRENCE A.,DALTON TIMOTHY J.,GAIDIS MICHAEL C.,HSU LOUIS L.,RADENS CARL J.,WONG KEITH K. H.,YANG CHIHAO
Format Patent
LanguageEnglish
Published 03.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of one of the first and second electrodes contacts the phase change element thereby reducing the contact area between the phase change element and one of the electrodes thereby increasing the current density through the phase change element and effectively inducing the phase change at a first programming power.
Bibliography:Application Number: CN200710089144