A CMOS imager photodiode with enhanced capacitance and method for manufacturing same

A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench hav...

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Bibliographic Details
Main Author ADKISSON JAMES W.,ELLIS-MONAGHAN JOHN J.,JAFFE MARK D.,PEARSON DALE J.,ROGERS DENNIS L
Format Patent
LanguageEnglish
Published 22.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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