Vacuum processing chamber for very large area substrates

A plasma reactor for PECVD treatment of large-size substrates according to the invention comprises a vacuum process chamber as an outer chamber and at least one inner reactor with an electrode show-erhead acting as RF antenna, said inner reactor again comprising a reactor bottom and a reactor top, w...

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Bibliographic Details
Main Authors JOST STEPHAN, ELYAAKOUBI MUSTAPHA, DELAUNAY LAURENT, AING PHANNARA
Format Patent
LanguageChinese
English
Published 23.12.2009
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:A plasma reactor for PECVD treatment of large-size substrates according to the invention comprises a vacuum process chamber as an outer chamber and at least one inner reactor with an electrode show-erhead acting as RF antenna, said inner reactor again comprising a reactor bottom and a reactor top, whereby stiffeners are supporting the reactor top and/or the reactor bottom, said stiffeners being connected to reactor top (2) and/or reactor bottom (6) via compensation spacers (4) with thicknesses chosen to compensate the thermal expansion during operation.
Bibliography:Application Number: CN200580039880