ORGANIC THIN FILM TRANSISTOR WITH DUAL LAYER ELECTRODES
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a...
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Main Authors | , |
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Format | Patent |
Language | English French |
Published |
10.09.2013
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Subjects | |
Online Access | Get full text |
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Summary: | A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length. |
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Bibliography: | Application Number: CA20072612033 |