"estrutura de cobertura de metal descontínua / não uniforme para integração de interconexão e respectivo método de fabricação"

A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upp...

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Bibliographic Details
Main Authors SURBHI MITTAL, CHAO - KUN HU, LYNNE M. GIGNAC, CHIN - CHAO YANG
Format Patent
LanguagePortuguese
Published 03.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.
Bibliography:Application Number: BR2009PI14051