Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction

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Bibliographic Details
Main Authors MAJID M. HASHEMI, EL-BADAWY AMIEN EL-SHARAWY
Format Patent
LanguageEnglish
Published 23.04.1999
Edition6
Subjects
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Author EL-BADAWY AMIEN EL-SHARAWY
MAJID M. HASHEMI
Author_xml – fullname: MAJID M. HASHEMI
– fullname: EL-BADAWY AMIEN EL-SHARAWY
BookMark eNqFjEsKwkAQBWehC39nsA9gQAgSswyi5AC6Dp2kE1vG7mFmYq5vEF27elBUvaWZiQotTFVSJK-PQZrIKlCzU4seokcJHKJ6uOOLpYeRW4Iape3R7cDqCCxT2nLXDeGTYqCEnhwnCr_DtZl3aANtvrsy28v5eioTclpRcNiQUKyKW57us0N-LNL_xhtrID8V
ContentType Patent
DBID EVB
DatabaseName esp@cenet
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Edition 6
ExternalDocumentID AU9307598A
GroupedDBID EVB
ID FETCH-epo_espacenet_AU9307598A3
IEDL.DBID EVB
IngestDate Fri Jul 19 12:23:54 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_AU9307598A3
Notes Application Number: AU19980093075
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990423&DB=EPODOC&CC=AU&NR=9307598A
ParticipantIDs epo_espacenet_AU9307598A
PublicationCentury 1900
PublicationDate 19990423
PublicationDateYYYYMMDD 1999-04-23
PublicationDate_xml – month: 04
  year: 1999
  text: 19990423
  day: 23
PublicationDecade 1990
PublicationYear 1999
RelatedCompanies THE NATIONAL SCIENTIFIC CORP
RelatedCompanies_xml – name: THE NATIONAL SCIENTIFIC CORP
Score 2.4959471
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990423&DB=EPODOC&locale=&CC=AU&NR=9307598A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwdV1LT4NAEJ7UatSbVk1978Fwklgoz0NjWmjTmPQR05reml2gD2OAFJr-fWdWUC-9EQizj-y3swPzfQPwFFoCDx28gUDijmpwXVN5xG21EWjhwhIRLiRiIw-GVn9qvM3MWQVWJRdG6oTupDgiIipAvOdyv07_PmL5MrcyexFrvJW89iYtXwkLuphLaR6K32l1xyN_5Cmeh5GkMnxvubiWTddpH8AhHqJtwkL3o0OclPS_Q-mdwdEYbcX5OVSiuAYnXll3rQbHg-J3N14WyMsuYN6nvJXkE90Q9Y6JdUpBKcvJ10ipD0Z8-3jJaFhM8Dhc8vSZfSU7RpIQG6qEss3kq-i4VGyOeDysNHgJj73uxOur2NP576TM29NySM0rqMZJHNWBYSxlmE5ARaRJukznhmZbXHNc4QahJhbXUN9n5Wb_o1s4_RErMFS9eQfVfLON7tEV5-JBzuI3HAuRFw
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwdV1LT8JAEJ4gGvGmqMEnezA92UihlPZADLSQqrxiwHBrdtvyMKZtoIS_78xK1Qu3pk1nH9lvZ6ed7xuAh8AQeOjgFQQSN1WdVzWVh7yhVnwtmBkixIVEbOT-wHAn-uu0Ps3BIuPCSJ3QrRRHRET5iPdU7tfJ30csR-ZWrp_EEm_Fz91x01GCHV3MojQPxWk3O6OhM7QV28ZIUhm8Ny1cy3XLbB3AIR6wG4SFzkebOCnJf4fSPYWjEdqK0jPIhVERCnZWd60Ix_3d72683CFvfQ6eS3kr8Se6IeodE8uEglKWkq-RUh-M-PbRnNGwmOBRMOfJI_uKt4wkIVZUCWWzlq-i41KxOeLxsMzgBZS7nbHtqthT73dSvNYkG1LtEvJRHIUlYBhL6XXTpyLSJF1W5brWMLhmWsLyA03MrqC0z8r1_kdlKLjjfs_rvQzebuDkR7hAV6u1W8inq014h245FfdyRr8BFZCUCg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Heterojunction+bipolar+transistor+having+wide+bandgap%2C+low+interdiffusion+base-emitter+junction&rft.inventor=MAJID+M.+HASHEMI&rft.inventor=EL-BADAWY+AMIEN+EL-SHARAWY&rft.date=1999-04-23&rft.externalDBID=A&rft.externalDocID=AU9307598A