Flexibly oriented ice dispenser

A fabrication method for a compact DRAM cell is described. The method includes forming a first doped polysilicon layer, a metal barrier layer, a second doped polysilicon layer, a metal silicide layer and a patterned silicon oxide layer on a semiconductor substrate. A first silicon nitride spacer is...

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Main Authors THADDEUS M. JABLONSKI, EHAB JALEEL
Format Patent
LanguageEnglish
Published 08.10.2001
Edition7
Subjects
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Abstract A fabrication method for a compact DRAM cell is described. The method includes forming a first doped polysilicon layer, a metal barrier layer, a second doped polysilicon layer, a metal silicide layer and a patterned silicon oxide layer on a semiconductor substrate. A first silicon nitride spacer is then formed on the sidewall of the patterned silicon oxide layer, followed by a removal of the patterned silicon oxide layer and parts of a metal silicide layer, the second doped polysilicon layer and the metal silicide layer to form an upper part of the gate. A second silicon nitride spacer is then formed on the sidewall of the upper part of the gate, followed by a removal of the exposed first doped polysilicon layer to form the lower part of the gate. A bit line contact and a node contact are subsequently formed on both side of the gate above the lower part of the gate.
AbstractList A fabrication method for a compact DRAM cell is described. The method includes forming a first doped polysilicon layer, a metal barrier layer, a second doped polysilicon layer, a metal silicide layer and a patterned silicon oxide layer on a semiconductor substrate. A first silicon nitride spacer is then formed on the sidewall of the patterned silicon oxide layer, followed by a removal of the patterned silicon oxide layer and parts of a metal silicide layer, the second doped polysilicon layer and the metal silicide layer to form an upper part of the gate. A second silicon nitride spacer is then formed on the sidewall of the upper part of the gate, followed by a removal of the exposed first doped polysilicon layer to form the lower part of the gate. A bit line contact and a node contact are subsequently formed on both side of the gate above the lower part of the gate.
Author THADDEUS M. JABLONSKI
EHAB JALEEL
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Snippet A fabrication method for a compact DRAM cell is described. The method includes forming a first doped polysilicon layer, a metal barrier layer, a second doped...
SourceID epo
SourceType Open Access Repository
SubjectTerms BLASTING
BOTTLES, JARS OR SIMILAR CONTAINERS
COLD ROOMS
COMBINED HEATING AND REFRIGERATION SYSTEMS
COOLING OR FREEZING APPARATUS NOT COVERED BY ANY OTHERSUBCLASS
DISPENSING, DELIVERING OR TRANSFERRING LIQUIDS, NOT OTHERWISEPROVIDED FOR
ELECTRICITY
HEAT PUMP SYSTEMS
HEATING
ICE-BOXES
LIGHTING
LIQUEFACTION SOLIDIFICATION OF GASES
LIQUID HANDLING
MANUFACTURE OR STORAGE OF ICE
MECHANICAL ENGINEERING
OPENING, CLOSING
PERFORMING OPERATIONS
REFRIGERATION OR COOLING
REFRIGERATORS
TRANSPORTING
WEAPONS
Title Flexibly oriented ice dispenser
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