Transistor having low capacitance field plate structure

A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap (37). A di...

Full description

Saved in:
Bibliographic Details
Main Authors Wilson, Kenneth A, Williams, Adrian D, Alavi, Kamal Tabatabaie, Macdonald, Christopher J
Format Patent
LanguageEnglish
Published 12.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one end connected to the source; and having a second end disposed between the gate and the drain and separated from the drain by a gap (37). A dielectric structure (30) is disposed over the semiconductor, having: a first portion disposed under the second end of the field plate structure; and, a second, thinner portion under the gap.
Bibliography:Application Number: AU20180354011