Preclean methodology for superconductor interconnect fabrication
A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top sur...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
21.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer. |
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Bibliography: | Application Number: AU20170345050 |