Preclean methodology for superconductor interconnect fabrication

A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top sur...

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Bibliographic Details
Main Authors Rennie, Michael, Kirby, Christopher F, Di Giacomo, Sandro J
Format Patent
LanguageEnglish
Published 21.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer.
Bibliography:Application Number: AU20170345050