SUBMOUNT AND SEMICONDUCTOR DEVICE
The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
25.02.2004
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8. |
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| AbstractList | The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8. |
| Author | YASUSHI TSUZUKI KENJIRO HIGAKI TAKASHI ISHII |
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| RelatedCompanies | SUMITOMO ELECTRIC INDUSTRIES, LTD |
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| Snippet | The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SUBMOUNT AND SEMICONDUCTOR DEVICE |
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