VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS

In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, t...

Full description

Saved in:
Bibliographic Details
Main Author THAKUR, RANDHIR
Format Patent
LanguageGerman
Published 15.10.2008
Subjects
Online AccessGet full text

Cover

Loading…