VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, t...
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Main Author | |
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Format | Patent |
Language | German |
Published |
15.10.2008
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Subjects | |
Online Access | Get full text |
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