(Invited) Integration of an Epitaxial-Base-Link HBT Device with f T = 300GHz, f max 480GHz in 90nm CMOS

• Published in: Meeting abstracts (Electrochemical Society) Vol. MA2020-02; no. 24; p. 1696
• Main Authors: Manger, Dirk, Boeck, Josef, Aufinger, Klaus, Boguth, Sabine, Gruenberger, Robert, Popp, Thomas, Binder, Boris, Hengst, Claudia, Majied, Soran, Markert, Matthias, Pribil, Andreas, Rothenhaeusser, Steffen, Tschumakow, Dmitri Alex, Dahl, Claus, Bever, Thomas
• Format: Journal Article
• Language: English
• Published: 23.11.2020

SiGe HBT based BiCMOS technologies have found widespread use in millimeter-Wave (mmW) applications such as high-speed communication and automotive radar, but are also receiving increased attention for operating frequencies above 100GHz. The drive for higher operating frequencies while reducing power...