The study of interface quality in HfO 2 /Si films probed by second harmonic generation

Abstract Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface qu...

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Published inJournal of physics. D, Applied physics Vol. 57; no. 41; p. 415105
Main Authors Ye, Li, Zhang, Libo, Wang, Shaotong, Zhao, Weiwei, Huang, Chongji, Gao, Wenshuai, Liu, Xue, Li, Tiaoyang, Li, Tao, Min, Tai, Tian, Mingliang, Chen, Xuegang
Format Journal Article
LanguageEnglish
Published 18.10.2024
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Abstract Abstract Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO 2 /Si ( n -type/ p -type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.
AbstractList Abstract Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO 2 /Si ( n -type/ p -type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.
Author Zhang, Libo
Tian, Mingliang
Gao, Wenshuai
Wang, Shaotong
Li, Tao
Huang, Chongji
Liu, Xue
Li, Tiaoyang
Chen, Xuegang
Ye, Li
Zhao, Weiwei
Min, Tai
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  doi: 10.1063/1.5041062
  contributor:
    fullname: Damianos
– volume: 34
  year: 2017
  ident: dad61f9bib31
  article-title: Characterization of interface state density of Ni/p-GaN structures by capacitance/conductance-voltage-frequency measurements
  publication-title: Chin. Phys. Lett.
  doi: 10.1088/0256-307x/34/9/097301
  contributor:
    fullname: Zhu
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Snippet Abstract Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the...
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Title The study of interface quality in HfO 2 /Si films probed by second harmonic generation
Volume 57
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