Analysis of High-Temperature Effects on $$InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$$ pHEMTs on Accessing RF/Analog performance: A Machine Learning Predictive Modeling

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Published inTransactions on electrical and electronic materials Vol. 25; no. 1; pp. 89 - 97
Main Authors Prasad, G. Lakshmi Vara, Kollu, Venkatagurunatham Naidu, Sailaja, M., Radhakrishnan, S., Mohan, K. Jagan, Reddy, A. Kishore, Chandra, G. Rajesh
Format Journal Article
LanguageEnglish
Published 01.02.2024
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Author Chandra, G. Rajesh
Reddy, A. Kishore
Prasad, G. Lakshmi Vara
Kollu, Venkatagurunatham Naidu
Radhakrishnan, S.
Sailaja, M.
Mohan, K. Jagan
Author_xml – sequence: 1
  givenname: G. Lakshmi Vara
  surname: Prasad
  fullname: Prasad, G. Lakshmi Vara
– sequence: 2
  givenname: Venkatagurunatham Naidu
  surname: Kollu
  fullname: Kollu, Venkatagurunatham Naidu
– sequence: 3
  givenname: M.
  surname: Sailaja
  fullname: Sailaja, M.
– sequence: 4
  givenname: S.
  surname: Radhakrishnan
  fullname: Radhakrishnan, S.
– sequence: 5
  givenname: K. Jagan
  surname: Mohan
  fullname: Mohan, K. Jagan
– sequence: 6
  givenname: A. Kishore
  surname: Reddy
  fullname: Reddy, A. Kishore
– sequence: 7
  givenname: G. Rajesh
  surname: Chandra
  fullname: Chandra, G. Rajesh
BookMark eNqdkEFrgzAYhsPoYG7rH9gpB6-pMVqdu8mwWJgwNu8hTT9tQKMkbtCO_qT-x6nbcaedXni-7-WF5xYtdKcBoQefrnxKY8-GLAh9QllAKA0fY3K6Qg6jCSPxOmEL5PiMJSSOaHyDltaqHQ2SdUT9JHLQJdWiOVplcVfhXNUHUkLbgxHDhwGcVRXIYbxp7LpbnVpvq_kXXQXntJkyPs_offcHd13c51lRzu1UShiXdY3fNt402dV4XKk60wot4QmnuBDyoDTgFxBGT5-vBvZKDuoTcNHtoRnZPbquRGNh-Zt3iG2y8jkn0nTWGqh4b1QrzJH7lE9u-I8bPrrhsxt-Cv5V-gb8ZG5_
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ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1007/s42341-023-00487-z
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2092-7592
EndPage 97
ExternalDocumentID 10_1007_s42341_023_00487_z
GroupedDBID -EM
.UV
0R~
406
9ZL
AACDK
AAHNG
AAJBT
AASML
AATNV
AAYXX
ABAKF
ABDZT
ABECU
ABFTV
ABKCH
ABMQK
ABTEG
ABTKH
ACAOD
ACDTI
ACHSB
ACIPQ
ACOKC
ACZOJ
ADRFC
ADURQ
ADYFF
AEFQL
AEMSY
AESKC
AGDGC
AGJBK
AGMZJ
AGQEE
AIAKS
AIGIU
AILAN
AITGF
AJZVZ
ALMA_UNASSIGNED_HOLDINGS
AMKLP
AMXSW
AXYYD
BGNMA
CITATION
DPUIP
EBLON
EBS
EJD
FIGPU
FINBP
FNLPD
FSGXE
HZB
IKXTQ
IWAJR
J-C
JDI
JZLTJ
KOV
LLZTM
M4Y
NPVJJ
NQJWS
NU0
O9J
OK1
PT4
RNS
ROL
RSV
SJYHP
SNE
SNPRN
SOHCF
SOJ
SRMVM
SSLCW
STPWE
UOJIU
UTJUX
VEKWB
VFIZW
ZMTXR
ID FETCH-crossref_primary_10_1007_s42341_023_00487_z3
ISSN 1229-7607
IngestDate Thu Sep 12 16:46:24 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 1
Language English
LinkModel OpenURL
MergedId FETCHMERGED-crossref_primary_10_1007_s42341_023_00487_z3
ParticipantIDs crossref_primary_10_1007_s42341_023_00487_z
PublicationCentury 2000
PublicationDate 2024-02-00
PublicationDateYYYYMMDD 2024-02-01
PublicationDate_xml – month: 02
  year: 2024
  text: 2024-02-00
PublicationDecade 2020
PublicationTitle Transactions on electrical and electronic materials
PublicationYear 2024
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SSID ssib039560196
ssj0000314789
Score 4.6600137
SourceID crossref
SourceType Aggregation Database
StartPage 89
Title Analysis of High-Temperature Effects on $$InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$$ pHEMTs on Accessing RF/Analog performance: A Machine Learning Predictive Modeling
Volume 25
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb5tAEF4lzqU9VGnaqmnTag_khCAB8zC94cTEaescarfKDS3eJSFxcGSbi6v8pP7Hzu6ya_KoWleyMFrDGJiPmVn4ZgYh45CCZSSMWJ0o9yzPJ3BLBSG1qENz2gk6vGI7Z1ucBf3v3udz_3xjM2iwlqpFZo-XT-aV_I9WYQz0yrNk19CsFgoDsA76hSVoGJb_pONmRRFO2LBGDKJgWSXZ7CmmBlevB5_TMgalJadluh92YRq9Hx7HE7ke8nX54zD7yzZclHnb7w1GQnYsOi4KEl_CizOU_GkQr4as8hFk7vtAkDaZqud6wbkftBDGVvRjmygXetXwoTLpQvyNbNejSxs0uvdAyC2vtbbyMzKXwD2xza_ken55U5g_yEw7oC-8vbMg-LLymizIRTWrxDuEG3A2Ba30UydSTMiViK4H9uqFGOVMiGJ-WXd2HtrNJyeup8jW2ti7bmSFgey6azMx5h5GMOPwo3seQqZm37sTpLmX3Y_qwEHyjB-5JMlCmUPY6jlwBG2LG83QWq4csCIdPPDLmi2pK0sLGSnISIWMdLmJttww8v0W2oqTbvdMWdI2n_U6dSFFEZO0Hbjr-FxQn3SdQSbySB8dXCNKa4Rbo230op4n4ViC_iXaYOUOet6onvkK_VLwx9McP4Q_ruGPpyU2DA79AwD1T4D0HQAavsM7MTTMnhg3DCwBzvfWAMffkgMJb9yA9ycc4xrcWIEbr8CNFbhfIzfpjY76ljrj9FYWekn_fOHbb1CrnJbsLcL5OCI5DLp5yDzH8zPqwyzdIeMo8N3IZbvIXEPwu7W2fo-erYC9h1qLWcU-QJC8yD7WiPgNf021Xg
link.rule.ids 315,786,790,27955,27956
linkProvider Library Specific Holdings
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Analysis+of+High-Temperature+Effects+on+%24%24InAs%2FIn_%7B0.3%7DAl_%7B0.7%7DAs%2FInSb%2FIn_%7B0.3%7DAl_%7B0.7%7DAs%24%24+pHEMTs+on+Accessing+RF%2FAnalog+performance%3A+A+Machine+Learning+Predictive+Modeling&rft.jtitle=Transactions+on+electrical+and+electronic+materials&rft.au=Prasad%2C+G.+Lakshmi+Vara&rft.au=Kollu%2C+Venkatagurunatham+Naidu&rft.au=Sailaja%2C+M.&rft.au=Radhakrishnan%2C+S.&rft.date=2024-02-01&rft.issn=1229-7607&rft.eissn=2092-7592&rft.volume=25&rft.issue=1&rft.spage=89&rft.epage=97&rft_id=info:doi/10.1007%2Fs42341-023-00487-z&rft.externalDBID=n%2Fa&rft.externalDocID=10_1007_s42341_023_00487_z
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1229-7607&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1229-7607&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1229-7607&client=summon