A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn) 2 As 2
Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn) 2 As 2 (BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature ( T C )...
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| Published in | Advanced Physics Research Vol. 4; no. 1 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.01.2025
|
| Online Access | Get full text |
| ISSN | 2751-1200 2751-1200 |
| DOI | 10.1002/apxr.202400124 |
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| Abstract | Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)
2
As
2
(BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature (
T
C
) of 230 K, a record among these types of materials. In this work, progress in further experimentally enhancing
T
C
of BZA to 260 K is reported by increasing Mn concentration with parallel K doping, as supported by complementary first‐principles calculations. A sufficient carrier concentration can suppress the short‐range antiferromagnetic interaction of the nearest Mn─Mn pair, which suppresses ferromagnetism in DMS materials. Consequently, a higher
T
C
has been obtained in BZA with improved Mn‐ and K‐doping levels by using high‐pressure synthesis that effectively eliminates structural distortion and overcomes the limitation of chemical solution in BZA. The work demonstrates an effective strategy to enhance
T
C
in DMS systems. |
|---|---|
| AbstractList | Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)
2
As
2
(BZA) belongs to a new type of DMS materials that feature independent spin and carrier doping. In previous studies, BZA shows a reliable Curie temperature (
T
C
) of 230 K, a record among these types of materials. In this work, progress in further experimentally enhancing
T
C
of BZA to 260 K is reported by increasing Mn concentration with parallel K doping, as supported by complementary first‐principles calculations. A sufficient carrier concentration can suppress the short‐range antiferromagnetic interaction of the nearest Mn─Mn pair, which suppresses ferromagnetism in DMS materials. Consequently, a higher
T
C
has been obtained in BZA with improved Mn‐ and K‐doping levels by using high‐pressure synthesis that effectively eliminates structural distortion and overcomes the limitation of chemical solution in BZA. The work demonstrates an effective strategy to enhance
T
C
in DMS systems. |
| Author | Wang, Xiancheng Shi, Luchuan Gu, Bo Jin, Changqing Zhao, Jianfa Uemura, Yasutomo J. Peng, Yi Li, Xiang Zhao, Guoqiang Zhang, Jun Deng, Zheng |
| Author_xml | – sequence: 1 givenname: Yi surname: Peng fullname: Peng, Yi organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 2 givenname: Xiang surname: Li fullname: Li, Xiang organization: Kavli Institute for Theoretical Sciences University of Chinese Academy of Sciences Beijing 100190 China – sequence: 3 givenname: Luchuan surname: Shi fullname: Shi, Luchuan organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 4 givenname: Guoqiang surname: Zhao fullname: Zhao, Guoqiang organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 5 givenname: Jun surname: Zhang fullname: Zhang, Jun organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 6 givenname: Jianfa surname: Zhao fullname: Zhao, Jianfa organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 7 givenname: Xiancheng surname: Wang fullname: Wang, Xiancheng organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 8 givenname: Bo surname: Gu fullname: Gu, Bo organization: Kavli Institute for Theoretical Sciences University of Chinese Academy of Sciences Beijing 100190 China – sequence: 9 givenname: Zheng orcidid: 0000-0003-3921-1721 surname: Deng fullname: Deng, Zheng organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China – sequence: 10 givenname: Yasutomo J. surname: Uemura fullname: Uemura, Yasutomo J. organization: Department of Physics Columbia University New York NY 10027 USA – sequence: 11 givenname: Changqing orcidid: 0000-0001-8097-9156 surname: Jin fullname: Jin, Changqing organization: Institute of Physics Chinese Academy of Sciences Beijing 100190 China, School of Physics University of Chinese Academy of Sciences Beijing 101408 China |
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| Snippet | Achieving room‐temperature ferromagnetism is one of the major challenges for diluted magnetic semiconductors (DMS). (Ba,K)(Zn,Mn)
2
As
2
(BZA) belongs to a new... |
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