APA (7th ed.) Citation

Ci, W., Wang, P., Xue, W., Yuan, H., & Xu, X. (2024). Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP 2 S 6 for Non‐Volatile Digital Memory and Artificial Synapse. Advanced functional materials, 34(25), . https://doi.org/10.1002/adfm.202316360

Chicago Style (17th ed.) Citation

Ci, Wenjuan, Peng Wang, Wuhong Xue, Hongtao Yuan, and Xiaohong Xu. "Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D VdW CuInP 2 S 6 for Non‐Volatile Digital Memory and Artificial Synapse." Advanced Functional Materials 34, no. 25 (2024). https://doi.org/10.1002/adfm.202316360.

MLA (9th ed.) Citation

Ci, Wenjuan, et al. "Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D VdW CuInP 2 S 6 for Non‐Volatile Digital Memory and Artificial Synapse." Advanced Functional Materials, vol. 34, no. 25, 2024, https://doi.org/10.1002/adfm.202316360.