Effect of a High Magnetic Field on the Microstructure During Directionally Solidified Sn-20wt.%Pb Hypoeutectic Alloy

The microstructures of Sn-20wt.%Pb hypoeutectic alloy directionally solidified under a longitudinal magnetic field were investigated.The results show that the application of a high magnetic field has a great influence on the morphology of primary P-Sn phase at a temperature gradient of G_L=52 K/cm.A...

Full description

Saved in:
Bibliographic Details
Published in钢铁研究学报:英文版 no. S2; pp. 1116 - 1122
Main Author DU Da-fan LI Xi Yves FAUTRELLE REN Zhong-ming LU Zhen-yuan YU Qing-chen
Format Journal Article
LanguageEnglish
Published 2012
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The microstructures of Sn-20wt.%Pb hypoeutectic alloy directionally solidified under a longitudinal magnetic field were investigated.The results show that the application of a high magnetic field has a great influence on the morphology of primary P-Sn phase at a temperature gradient of G_L=52 K/cm.At a certain growth speed,with the increase of magnetic field intensity,the magnetic field causes the primaryβ-Sn phase irregular and to be deformed,further,the magnetic field promotes the columnar to equaixed transition(CET).Further,the thermoelectric magnetic force(TEMF)imposed on the dendrite under a high magnetic field has been calculated and the results show that the numerical magnitude of the TEMF during directional solidification under a 10 Thigh magnetic field is about 10~4N/m~3 and this force should be responsible for the occurrence of the CET in the Sn-Pb alloy.This may act as an experimental proof that the coupling of temperature gradient and high magnetic field will induce the occurrence of the CET in Sn-Pb alloy.Above phenomena may be attributed to the thermoelectric magnetic force(TEMF)in solid.
Bibliography:11-3678/TF
DU Da-fan;LI Xi;Yves FAUTRELLE;REN Zhong-ming;LU Zhen-yuan;YU Qing-chen;Department of Materials Engineering,Shanghai University;SIMAP-EPM-Madylam/CNRS,Grenoble Institute of Technology
ISSN:1006-706X
2210-3988