Influences of Fractal Substrate Structures on Dynamic Scaling Behaviors of Etching Model

The Etching model on various fractal substrates embedded in two dimensions was investigated by means of kinetic Mento Carlo method in order to determine the relationship between dynamic scaling exponents and fractal parameters. The fractal dimensions are from 1.465 to 1.893, and the random walk expo...

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Bibliographic Details
Published in理论物理通讯：英文版 Vol. 67; no. 10; pp. 471 - 477
Main Author 宋丽建;唐刚;寻之朋;郝大鹏;陈祎力;张哲
Format Journal Article
LanguageEnglish
Published 2017
Subjects
Carlo法
分形参数
分形维数
动力学行为
基底结构
标度行为
腐蚀模型
随机游走
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Summary:The Etching model on various fractal substrates embedded in two dimensions was investigated by means of kinetic Mento Carlo method in order to determine the relationship between dynamic scaling exponents and fractal parameters. The fractal dimensions are from 1.465 to 1.893, and the random walk exponents are from 2.101 to 2.578. It is found that the dynamic behaviors on fractal lattices are more complex than those on integer dimensions. The roughness exponent increases with the increasing of the random walk exponent on the fractal substrates but shows a non-monotonic relation with respect to the fractal dimension. No monotonic change is observed in the growth exponent.
Bibliography:11-2592/O3
Etching model, fractal substrates, dynamic scaling
The Etching model on various fractal substrates embedded in two dimensions was investigated by means of kinetic Mento Carlo method in order to determine the relationship between dynamic scaling exponents and fractal parameters. The fractal dimensions are from 1.465 to 1.893, and the random walk exponents are from 2.101 to 2.578. It is found that the dynamic behaviors on fractal lattices are more complex than those on integer dimensions. The roughness exponent increases with the increasing of the random walk exponent on the fractal substrates but shows a non-monotonic relation with respect to the fractal dimension. No monotonic change is observed in the growth exponent.
ISSN:0253-6102