Influence of GalnP ordering on the performance of GalnP solar cells
CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing g...
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| Published in | 半导体学报：英文版 no. 7; pp. 31 - 34 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2016
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| Subjects | |
| Online Access | Get full text |
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| Abstract | CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. |
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| AbstractList | CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. |
| Author | 于淑珍 董建荣 赵勇明 孙玉润 李奎龙 曾徐路 杨辉 |
| AuthorAffiliation | Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China University of Chinese Academy of Sciences, Beijing 100049, China |
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| DocumentTitleAlternate | Influence of GalnP ordering on the performance of GalnP solar cells |
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| Notes | MOCVD; GaInP; ordering; solar cell CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance. Yu Shuzhen, Dong Jlanrong, Zhao Yongming, Sun Yumn, Li Kuilong, Zeng Xulu, and Yang Hui（1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 2University of Chinese Academy of Sciences, Beijing 100049, China） 11-5781/TN |
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| PublicationTitle | 半导体学报：英文版 |
| PublicationTitleAlternate | Chinese Journal of Semiconductors |
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| Snippet | CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material... |
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| StartPage | 31 |
| SubjectTerms | GaInP 低温光致发光 太阳能电池 少数载流子寿命 常温 生长条件 电池性能 金属有机化学气相沉积 |
| Title | Influence of GalnP ordering on the performance of GalnP solar cells |
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