BiVO_4 semiconductor sensitized solar cells

Semiconductor sensitized solar cells（SSSCs） are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment-friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized...

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Bibliographic Details
Published in中国科学：化学英文版 no. 9; pp. 1489 - 1493
Main Author Yi Li Jun Zhu Hui Chu Junfeng Wei Feng Liu Mei Lv Junwang Tang Bing Zhang Jianxi Yao Zhipeng Huo Linhua Hu Songyuan Dai
Format Journal Article
LanguageEnglish
Published 2015
Subjects
半导体
可见光响应
太阳能电池
成本效益
敏化剂
氧化物
沉积技术
量子点
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Summary:Semiconductor sensitized solar cells（SSSCs） are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment-friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate（BiVO4） quantum dots by employing facile successive ionic layer adsorption and reaction（SILAR） deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare TiO2, due to the narrow bandgap absorption of BiVO4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare Bi VO4 quantum dots based solar cells, but also provides important insights into the low bandgap oxide SSSCs.
Bibliography:Semiconductor sensitized solar cells（SSSCs） are promising candidates for the third generation of cost-effective photovoltaic solar cells and it is important to develop a group of robust, environment-friendly and visible-light-responsive semiconductor sensitizers. In this paper, we first synthesized bismuth vanadate（BiVO4） quantum dots by employing facile successive ionic layer adsorption and reaction（SILAR） deposition technique, which we then used as a sensitizer for solar energy conversion. The preliminary optimised oxide SSSC showed an efficiency of 0.36%, nearly 2 orders of magnitude enhancement compared with bare TiO2, due to the narrow bandgap absorption of BiVO4 quantum dots and intimate contact with the oxide substrate. This result not only demonstrates a simple method to prepare Bi VO4 quantum dots based solar cells, but also provides important insights into the low bandgap oxide SSSCs.
solar cells,bismuth vanadate,successive ionic layer adsorption reaction deposition,sensitizer
11-5839/O6
ISSN:1674-7291
1869-1870