Ku波段0.18μm CMOS压控振荡器电路设计

在TSMC0.18μmRFCMOS工艺下设计了一个Ku波段电感电容压控振荡器,该电路采用NMOS交叉耦合型,结合滤波技术降低相位噪声,并利用开关电容阵列为其扩频,使电路获得卓越的性能。后仿真结果表明,该电路实现了10GHz-14GHz的宽调频,在整个频带内其相位噪声低于-112dBc/Hz在1MHz的偏移处;在1.8V的电压下,核心电路工作电流为5mA。...

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Published in电子技术应用 Vol. 40; no. 4; pp. 32 - 34
Main Author 冯海洋 杜慧敏 张博 明远先
Format Journal Article
LanguageChinese
Published 2014
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Abstract 在TSMC0.18μmRFCMOS工艺下设计了一个Ku波段电感电容压控振荡器,该电路采用NMOS交叉耦合型,结合滤波技术降低相位噪声,并利用开关电容阵列为其扩频,使电路获得卓越的性能。后仿真结果表明,该电路实现了10GHz-14GHz的宽调频,在整个频带内其相位噪声低于-112dBc/Hz在1MHz的偏移处;在1.8V的电压下,核心电路工作电流为5mA。
AbstractList 在TSMC0.18μmRFCMOS工艺下设计了一个Ku波段电感电容压控振荡器,该电路采用NMOS交叉耦合型,结合滤波技术降低相位噪声,并利用开关电容阵列为其扩频,使电路获得卓越的性能。后仿真结果表明,该电路实现了10GHz-14GHz的宽调频,在整个频带内其相位噪声低于-112dBc/Hz在1MHz的偏移处;在1.8V的电压下,核心电路工作电流为5mA。
Author 冯海洋 杜慧敏 张博 明远先
AuthorAffiliation 西安邮电大学电子工程学院,陕西西安710161
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DocumentTitleAlternate Ku-band 0.18 μm CMOS VCO circuit design
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Notes This paper proposes a Ku-band NMOS differential cross-coupled LC VCO with the TSMC 0.18 μm RF cmos pro- cess.To lower the phase-noise, the filtering technique is used, and to widen the tuning range, the switched-capacitor array is used, which have improved the performance. Post-simulation has shown that the tuning range is from 10 GHz to 14 GHz, and the phase noise is lower than -112 dBc/Hz @1 MHz offset in the whole frequency band. The VCO core consumes 5 mA current under 1.8 V supply voltage.
LC VCO ; Ku-band ; phase noise
Feng Haiyang, Du Huimin, Zhang Bo, Ming Yuanxian (Institute of Electrical Engineering, Xi'an University of Posts & Telecommunications, Xi'an 710161, China)
11-2305/TN
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PublicationYear 2014
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StartPage 32
SubjectTerms Ku波段
电感电容压控振荡器
相位噪声
Title Ku波段0.18μm CMOS压控振荡器电路设计
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