Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in （110） Plane

We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions （SOIs） on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the （110） crystallographic plane. We find that the oscillations of the conductance induce...

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Published in中国物理快报：英文版 no. 3; pp. 148 - 151
Main Author SUN Jin-Fang CHENG Fang
Format Journal Article
LanguageEnglish
Published 2014
Subjects
准一维
嵌入式
平面
晶面
自旋极化
调整
量子线
面内磁场
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Summary:We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions （SOIs） on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the （110） crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.
Bibliography:We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions （SOIs） on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the （110） crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.
11-1959/O4
ISSN:0256-307X
1741-3540