Photoluminescence properties and chemical bond varia- Lions of SiNx：H films with silicon quantum dots

Hydrogenated silicon nitride （SiNx：H） thin films are deposited on p-type silicon substrates by plasma enhanced chemical vapbr deposition （PECVD） using a gas mixture of ammonia and silane at 230℃. The chemical compositions and optical properties of these films, which are dealt at different annealing...

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Published in光电子快报：英文版 no. 5; pp. 375 - 377
Main Author 熊许旭 姜礼华 曾祥斌 张笑
Format Journal Article
LanguageEnglish
Published 2013
Subjects
傅里叶变换红外光谱
光致发光性质
化学键
氮化硅
狮子
硅量子点
等离子体增强
薄膜
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ISSN1673-1905
1993-5013

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Summary:Hydrogenated silicon nitride （SiNx：H） thin films are deposited on p-type silicon substrates by plasma enhanced chemical vapbr deposition （PECVD） using a gas mixture of ammonia and silane at 230℃. The chemical compositions and optical properties of these films, which are dealt at different annealing temperatures, are investigated by Fourier transform infrared （FTIR） absorption spectroscopy and photoluminescence （PL） spectroscopy, respectively. It is shown that the FTIR presents an asymmetric Si-N stretching mode, whose magnitude is enhanced and position is shifted towards higher frequencies gradually with the increase of the annealing temperature. Meanwhile, it is found that the PL peak shows red shift with its magnitude decreasing, and disappears at 1100℃. The FTIR and PL spectra characteristics suggest that the light emission is attributed to the quantum confinement effect of the carriers inside silicon quantum dots embedded in SiNx： H thin films.
Bibliography:Hydrogenated silicon nitride （SiNx：H） thin films are deposited on p-type silicon substrates by plasma enhanced chemical vapbr deposition （PECVD） using a gas mixture of ammonia and silane at 230℃. The chemical compositions and optical properties of these films, which are dealt at different annealing temperatures, are investigated by Fourier transform infrared （FTIR） absorption spectroscopy and photoluminescence （PL） spectroscopy, respectively. It is shown that the FTIR presents an asymmetric Si-N stretching mode, whose magnitude is enhanced and position is shifted towards higher frequencies gradually with the increase of the annealing temperature. Meanwhile, it is found that the PL peak shows red shift with its magnitude decreasing, and disappears at 1100℃. The FTIR and PL spectra characteristics suggest that the light emission is attributed to the quantum confinement effect of the carriers inside silicon quantum dots embedded in SiNx： H thin films.
12-1370/TN
ISSN:1673-1905
1993-5013