Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we...
Saved in:
Published in | 中国科学:技术科学英文版 Vol. 54; no. 12; pp. 3404 - 3408 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
2011
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation. |
---|---|
Bibliography: | laser-irradiation induced amorphous, GeeSbeTes, TEM grid, laser pulse, pair distribution function It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation. 11-5845/TH |
ISSN: | 1674-7321 1869-1900 |