Preparation and characterization of laser-irradiation induced amorphous for GeeSb2Tes phase-change materials

It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we...

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Published in中国科学:技术科学英文版 Vol. 54; no. 12; pp. 3404 - 3408
Main Author ZHANG Lei HUANG Huan YAN ZhengGuang HAN XlaoDong WANG Yang ZHANG Ze WU YiQun
Format Journal Article
LanguageEnglish
Published 2011
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Summary:It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.
Bibliography:laser-irradiation induced amorphous, GeeSbeTes, TEM grid, laser pulse, pair distribution function
It has been a challenge to fully understand the structural characteristics of laser-irradiation induced amorphous (L-a) Ge2Sb2Te5 (GST) alloy due to the difficulties of collecting diffraction data from high purity specimens. In this paper, by fabri- cating GST thin films on different substrates, we exhibit an effective way of preparing L-a GST dots in submicron scale on various types of specially designed transmission electron microscope (TEM) grids. The structural characteristics of L-a GST in the form of pair distribution functions (PDF) can be achieved on single dots of L-a GST via selected area electron diffraction (SAED). This general approach would be convenient for precisely producing laser-irradiation induced materials in submicron scale for structural investigation.
11-5845/TH
ISSN:1674-7321
1869-1900