A novel TFS-IGBT with a super junction floating layer

• Published in: Journal of semiconductors no. 11; pp. 38 - 42
• Main Author: Ye Jun Fu Daping Luo Bo Zhao Yuanyuan Qiao Ming Zhang Bo
• Format: Journal Article
• Language: Chinese
• Published: 2010
• Subjects: IGBT; TFS; 交界处; 关断损耗; 击穿电压; 掺杂浓度; 浮层; 阻断电压
• ISSN: 1674-4926

A novel trench field stop（TFS） IGBT with a super junction（SJ） floating layer（SJ TFS-IGBT） is proposed. This IGBT presents a high blocking voltage（〉 1200 V）,low on-state voltage drop and fast turn-off capability.A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution,which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state /switching state for the SJ TFS-IGBT.A low on-state voltage（VF） and a high breakdown voltage（BV） can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance.A low turn-off loss can be achieved by decreasing the concentration of the P-anode.Simulation results show that the BV is enhanced by 100 V,VF is decreased by 0.33 V（at 100 A/cm2） and the turn-off time is shortened by 60%,compared with conventional TFS-IGBTs.