Vacuum distillation refining of metallurgical grade silicon （Ⅰ） ---Thermodynamics on removal of phosphorus from metallurgical grade silicon

• Published in: Transactions of Nonferrous Metals Society of China Vol. 17; no. A02; pp. 1022 - 1025
• Main Author: 魏奎先 马文会 戴永年 杨斌 刘大春 汪镜福
• Format: Journal Article
• Language: English
• Published: 2007
• Subjects: 冶金学; 热力学; 真空蒸馏精炼
• ISSN: 1003-6326

The removal of impurity phosphorus from metallurgical grade silicon is one of the major problems on purification of metallurgical grade silicon for solar grade silicon preparation. The thermodynamics on vacuum refining process of the metallurgical grade silicon was studied via separation coefficient of impurity phosphorus in the metallurgical grade silicon and vapor-liquid equilibrium composition diagram of Si-P binary alloy at different temperatures. The behaviors of impurity phosphorus in the vacuum distillation process were examined. The results show that the vacuum distillation should be taken to obtain silicon with less than 10^-7 P, and the impurity phosphorus is volatilized easily by vacuum distillation in thermodynamics. Phosphorus is distilled from the molten silicon and concentrated in vapor phase.