Deposition of antimony telluride thin film by ECALE
The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition syste...
Saved in:
| Published in | Science China. Technological sciences no. 6; pp. 685 - 692 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2006
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure. |
|---|---|
| AbstractList | The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure. |
| Author | GAO Xianhui YANG Junyou ZHU Wen HOU Jie BAO Siqian FAN Xi'an DUAN Xingkai |
| AuthorAffiliation | Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China Department of Materials Science and Engineering, Huazhong University of Science and echnology, Wuhan 430074, China |
| Author_xml | – sequence: 1 fullname: GAO Xianhui YANG Junyou ZHU Wen HOU Jie BAO Siqian FAN Xi'an DUAN Xingkai |
| BookMark | eNqNjb0OgjAUhRuDiai8QwdXktby19EgxsHRnQAWuFpu1daBt7eDD-BZzjecL2dNAjSoFiTkRSZjLhkLPGd5Eudiz1cksvbOfEQhGU9CIo7qaSw4MEhNTxt0MBmcqVNaf95wU9SNgLQHPdF2plV5uFRbsuwbbVX06w3ZnapreY670eDwAhzqtuke3lE1918yT3nKxJ-zL9ncNyU |
| ContentType | Journal Article |
| DBID | 2RA 92L CQIGP W92 ~WA |
| DatabaseName | 维普_期刊 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| DocumentTitleAlternate | Deposition of antimony telluride thin film by ECALE |
| EISSN | 1869-1900 |
| EndPage | 692 |
| ExternalDocumentID | 1000975150 |
| GroupedDBID | -5B -5G -BR -EM -Y2 -~C .VR 06D 0VY 1N0 29~ 2B. 2C. 2J2 2JN 2JY 2KG 2KM 2LR 2RA 2VQ 2~H 30V 4.4 406 40D 40E 5VR 5VS 8TC 8UJ 92E 92I 92L 92Q 93N 95- 95. 96X AAAVM AABHQ AAFGU AAHNG AAIAL AAJKR AANZL AAPBV AARHV AARTL AATVU AAUYE AAWCG AAYIU AAYQN AAYTO ABBBX ABDZT ABECU ABFGW ABFTD ABFTV ABHQN ABJOX ABKAS ABKCH ABKTR ABMQK ABNWP ABQBU ABSXP ABTEG ABTHY ABTMW ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACSNA ACTTH ACVWB ACWMK ADHIR ADINQ ADKNI ADKPE ADMDM ADRFC ADTIX ADURQ ADYFF ADYOE ADZKW AEBTG AEFTE AEGAL AEGNC AEJHL AEJRE AEOHA AEPYU AESTI AETLH AEVTX AEXYK AFLOW AFQWF AFUIB AFWTZ AFYQB AFZKB AGAYW AGDGC AGGBP AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMTXH AMYLF ARMRJ ASPBG AVWKF AXYYD AZFZN B-. BDATZ CAG CCEZO CDYEO CEKLB CHBEP COF CQIGP CSCUP CW9 DNIVK EBLON EBS EIOEI EJD ESBYG FA0 FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 H13 HG6 HMJXF HRMNR HVGLF HZ~ IJ- IPNFZ IXD I~Z J-C JBSCW JZLTJ KOV LLZTM MA- N2Q NB0 NQJWS O9J P9P PF0 PT4 QOS R89 RIG ROL RSV S16 S3B SAP SCL SEG SHX SISQX SJYHP SNE SNX SOJ SPISZ SRMVM SSLCW STPWE SZN TCJ TGP TR2 TSG TUC U2A UG4 UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W23 W48 W92 WK8 YLTOR Z5O Z7R Z7S Z7V Z7X Z7Y Z7Z Z85 Z88 ZMTXR ~A9 ~WA |
| ID | FETCH-chongqing_backfile_10009751503 |
| ISSN | 1674-7321 |
| IngestDate | Fri Nov 25 17:01:03 EST 2022 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 6 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-chongqing_backfile_10009751503 |
| Notes | TH 11-5845/TH |
| ParticipantIDs | chongqing_backfile_1000975150 |
| PublicationCentury | 2000 |
| PublicationDate | 2006 |
| PublicationDateYYYYMMDD | 2006-01-01 |
| PublicationDate_xml | – year: 2006 text: 2006 |
| PublicationDecade | 2000 |
| PublicationTitle | Science China. Technological sciences |
| PublicationTitleAlternate | SCIENCE CHINA Technological Sciences |
| PublicationYear | 2006 |
| SSID | ssj0000389014 |
| Score | 3.4183211 |
| Snippet | The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was... |
| SourceID | chongqing |
| SourceType | Publisher |
| StartPage | 685 |
| SubjectTerms | ECALE materials nanomaterials Sb2Te3 thermoelectric |
| Title | Deposition of antimony telluride thin film by ECALE |
| URI | http://lib.cqvip.com/qk/60110X/20066/1000975150.html |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Nb4IwGG4Wd9kOyz6zL5ce3KnBCFTUI_GLuEwPk0x3WQTKJLoSDRzcr99bQMqWZV-XppRQSp_y8vSl71OEKjDlEMJ_vuJ4dU2hVPMUR_VhLDdVveG4LTpLFtHcDw3LpoNJfSJ3DE2iSyKn6r59GVfyH1ShDHAVUbJ_QDavFAogD_hCCghD-iuMO2y75ir5nc8j6HgOdJItl_E68BiwyoAL6aVXwTK7bTNT3cjI6Pa9TvbQrkovu4yUdOUKw745IhMYS_M4IFNz2CeDmG_CmDxZNnlknFgjmwwCBhP_EXkIVsJu9MwhXHKrNSDfsZMD_rKYBR89DQWzaIhVm3oay1xlaVnTaClAJ2qFUVI0hUa6FU_2VTXSHe8-aVurSRxJPXW6ULAvJbRr9qd30k0m9P9qiUJ73gahgjEP-csK2lzgAuNDdJCReGymiByhHcaP0X5B2vEE6RIbHPp4iw3OscECGyywwc4GJ9icokqvO25bSn5jIBnuQkhnPctn0M9QiYecnSNM1Zbn-8wDi-lT1fdmXgOosaoyXWMGdb0LVP62qssfzl-hPekLukalaB2zMrCjyLnJevAdXeEWAA |
| link.rule.ids | 315,783,787,4031 |
| linkProvider | Springer Nature |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Deposition+of+antimony+telluride+thin+film+by+ECALE&rft.jtitle=Science+China.+Technological+sciences&rft.au=GAO+Xianhui+YANG+Junyou+ZHU+Wen+HOU+Jie+BAO+Siqian+FAN+Xi%27an+DUAN+Xingkai&rft.date=2006&rft.issn=1674-7321&rft.eissn=1869-1900&rft.issue=6&rft.spage=685&rft.epage=692&rft.externalDocID=1000975150 |
| thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F60110X%2F60110X.jpg |