A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices

• Main Authors: Chen, X, Strozier, J, Wu, N. J, Ignatiev, A, Nian, Y. B
• Format: Journal Article
• Language: English
• Published: 03.10.2005
• Subjects: Physics - Materials Science; Physics - Strongly Correlated Electrons

refer to New Journal of Physics, 8 (2006) 229. A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely characterize...