Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3
Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the...
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Language | English |
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16.10.2017
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Abstract | Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More
recently, doping was adapted to optimize the behavior at ferroelectric domain
walls. In contrast to more than a century of research on semiconductors, the
impact of chemical substitutions on the local electronic response at domain
walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor
doped with Ti$^{4+}$. Density functional theory calculations show that
Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy
measurements confirm the robustness of the ferroelectric domain template. The
electronic transport at both macro- and nanoscopic length scales is
characterized. The measurements demonstrate the intrinsic nature of emergent
domain wall currents and point towards Poole-Frenkel conductance as the
dominant transport mechanism. Aside from the new insight into the electronic
properties of hexagonal manganites, B-site doping adds an additional degree of
freedom for tuning the domain wall functionality. |
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AbstractList | Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More
recently, doping was adapted to optimize the behavior at ferroelectric domain
walls. In contrast to more than a century of research on semiconductors, the
impact of chemical substitutions on the local electronic response at domain
walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor
doped with Ti$^{4+}$. Density functional theory calculations show that
Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy
measurements confirm the robustness of the ferroelectric domain template. The
electronic transport at both macro- and nanoscopic length scales is
characterized. The measurements demonstrate the intrinsic nature of emergent
domain wall currents and point towards Poole-Frenkel conductance as the
dominant transport mechanism. Aside from the new insight into the electronic
properties of hexagonal manganites, B-site doping adds an additional degree of
freedom for tuning the domain wall functionality. |
Author | Evans, D. M Bourret, E Meier, D Holstad, T. S Ruff, A Yan, Z Selbach, S. M Smaabraaten, D. R Schaab, J Krohns, S Tzschaschel, Ch |
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BackLink | https://doi.org/10.48550/arXiv.1710.05557$$DView paper in arXiv https://doi.org/10.1103/PhysRevB.97.085143$$DView published paper (Access to full text may be restricted) |
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Snippet | Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More
recently, doping was adapted to optimize the behavior... |
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Title | Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3 |
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