Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3
Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the...
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Main Authors | , , , , , , , , , , |
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Format | Journal Article |
Language | English |
Published |
16.10.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Phys. Rev. B 97, 085143 (2018) Acceptor and donor doping is a standard for tailoring semiconductors. More
recently, doping was adapted to optimize the behavior at ferroelectric domain
walls. In contrast to more than a century of research on semiconductors, the
impact of chemical substitutions on the local electronic response at domain
walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor
doped with Ti$^{4+}$. Density functional theory calculations show that
Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy
measurements confirm the robustness of the ferroelectric domain template. The
electronic transport at both macro- and nanoscopic length scales is
characterized. The measurements demonstrate the intrinsic nature of emergent
domain wall currents and point towards Poole-Frenkel conductance as the
dominant transport mechanism. Aside from the new insight into the electronic
properties of hexagonal manganites, B-site doping adds an additional degree of
freedom for tuning the domain wall functionality. |
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DOI: | 10.48550/arxiv.1710.05557 |