Resistive Switching Mechanisms on TaO x and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

• Published in: ACS nano Vol. 10; no. 1; pp. 1481 - 1492
• Main Authors: Moors, Marco, Adepalli, Kiran Kumar, Lu, Qiyang, Wedig, Anja, Bäumer, Christoph, Skaja, Katharina, Arndt, Benedikt, Tuller, Harry Louis, Dittmann, Regina, Waser, Rainer, Yildiz, Bilge, Valov, Ilia
• Format: Journal Article
• Language: English
• Published: American Chemical Society 26.01.2016
• Subjects: strontium ruthenate; tantalum oxide; resistive switching; scanning tunneling microscopy; electric field effect

The local electronic properties of tantalum oxide (TaO x , 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in both oxides is achieve...