Lattice Monte Carlo model of SiOx layers

• Published in: Nanotechnologies in Russia Vol. 3; no. 5-6
• Main Authors: Zverev, A. V., Neizvestnyi, I. G., Shwartz, N. L., Yanovitskaya, Z. Sh
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.06.2008
• Subjects: Chemistry and Materials Science; Experiment; Industrial and Production Engineering; Machines; Manufacturing; Materials Science; Nanotechnology; Processes; Metastable State; Silicon Atom; Silicon Cluster; Excess Silicon; Empty Site

A kinetic Monte Carlo model of amorphous SiO x layers has been developed on the basis of a partially filled diamond-like lattice with allowance for different valences of silicon and oxygen. In the starting model layers of stoichiometric composition SiO 2 , about 50% of lattice sites are randomly occ...