基于化学气相沉积法铜基大面积单晶双层石墨烯薄膜的快速生长

O484.4+2; 通过分段控制甲烷与氢气的流量比以及增加氧气的供应,使用低压化学气相沉积设备(LPCVD)、在40 min的生长时间内、在铜箔上生长出连续的高质量的单晶石墨烯薄膜.研究表明,双氧钝化的使用和调整甲烷与氢气的流量比可以达到石墨烯的最佳成核和生长速率,使得石墨烯可以在短时间内生长为连续的单晶薄膜;石墨烯基场效应晶体管(FET)展现了优良的电学特性,其空穴迁移率可达到4347 cm2/(V·s)....

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Published in华东理工大学学报(自然科学版) Vol. 47; no. 1; pp. 123 - 128
Main Authors 张津铭, 牟海川, 谢海芬
Format Journal Article
LanguageChinese
Published 华东理工大学理学院物理系,上海 200237 28.02.2021
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ISSN1006-3080
DOI10.14135/j.cnki.1006-3080.20191111001

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Abstract O484.4+2; 通过分段控制甲烷与氢气的流量比以及增加氧气的供应,使用低压化学气相沉积设备(LPCVD)、在40 min的生长时间内、在铜箔上生长出连续的高质量的单晶石墨烯薄膜.研究表明,双氧钝化的使用和调整甲烷与氢气的流量比可以达到石墨烯的最佳成核和生长速率,使得石墨烯可以在短时间内生长为连续的单晶薄膜;石墨烯基场效应晶体管(FET)展现了优良的电学特性,其空穴迁移率可达到4347 cm2/(V·s).
AbstractList O484.4+2; 通过分段控制甲烷与氢气的流量比以及增加氧气的供应,使用低压化学气相沉积设备(LPCVD)、在40 min的生长时间内、在铜箔上生长出连续的高质量的单晶石墨烯薄膜.研究表明,双氧钝化的使用和调整甲烷与氢气的流量比可以达到石墨烯的最佳成核和生长速率,使得石墨烯可以在短时间内生长为连续的单晶薄膜;石墨烯基场效应晶体管(FET)展现了优良的电学特性,其空穴迁移率可达到4347 cm2/(V·s).
Author 谢海芬
张津铭
牟海川
AuthorAffiliation 华东理工大学理学院物理系,上海 200237
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MU Haichuan
XIE Haifen
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Keywords 化学气相沉积
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双氧钝化
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Snippet O484.4+2; 通过分段控制甲烷与氢气的流量比以及增加氧气的供应,使用低压化学气相沉积设备(LPCVD)、在40...
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StartPage 123
Title 基于化学气相沉积法铜基大面积单晶双层石墨烯薄膜的快速生长
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