开口金属腔体对强电磁脉冲的耦合效应
O539; 为了评价腔体开口因素对核电磁脉冲(High-amplitude ElectroMagnetic Pulse,HEMP)和高功率微波(High Power Microwave,HPM)破坏效能的影响,采用CST电磁计算软件建立强电磁脉冲的孔缝耦合模型,研究孔缝的位置、大小以及长宽比对HEMP和HPM耦合效应的影响.结果表明,孔缝的位置、大小及长宽比对HEMP的耦合效应影响较大,合理控制孔缝的位置、大小以及长宽比能在一定程度上削弱HEMP的破坏效能.对于HPM,相同条件下其耦合效应要明显强于HEMP.在孔缝达到一定尺寸后,其大小和长宽比对HPM的耦合效应影响较小,仅孔缝位置会带来较大的...
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Published in | 国防科技大学学报 Vol. 42; no. 1; pp. 18 - 23 |
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Main Authors | , |
Format | Journal Article |
Language | Chinese |
Published |
国防科技大学 脉冲功率激光技术国家重点实验室,安徽 合肥,230037
28.02.2020
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Subjects | |
Online Access | Get full text |
ISSN | 1001-2486 |
DOI | 10.11887/j.cn.202001003 |
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Abstract | O539; 为了评价腔体开口因素对核电磁脉冲(High-amplitude ElectroMagnetic Pulse,HEMP)和高功率微波(High Power Microwave,HPM)破坏效能的影响,采用CST电磁计算软件建立强电磁脉冲的孔缝耦合模型,研究孔缝的位置、大小以及长宽比对HEMP和HPM耦合效应的影响.结果表明,孔缝的位置、大小及长宽比对HEMP的耦合效应影响较大,合理控制孔缝的位置、大小以及长宽比能在一定程度上削弱HEMP的破坏效能.对于HPM,相同条件下其耦合效应要明显强于HEMP.在孔缝达到一定尺寸后,其大小和长宽比对HPM的耦合效应影响较小,仅孔缝位置会带来较大的影响.当开口平面与HPM入射方向平行时,耦合效应最弱,但此时耦合进入腔体内的能量还是很容易达到多种电子元器件的电磁损伤阈值级别. |
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AbstractList | O539; 为了评价腔体开口因素对核电磁脉冲(High-amplitude ElectroMagnetic Pulse,HEMP)和高功率微波(High Power Microwave,HPM)破坏效能的影响,采用CST电磁计算软件建立强电磁脉冲的孔缝耦合模型,研究孔缝的位置、大小以及长宽比对HEMP和HPM耦合效应的影响.结果表明,孔缝的位置、大小及长宽比对HEMP的耦合效应影响较大,合理控制孔缝的位置、大小以及长宽比能在一定程度上削弱HEMP的破坏效能.对于HPM,相同条件下其耦合效应要明显强于HEMP.在孔缝达到一定尺寸后,其大小和长宽比对HPM的耦合效应影响较小,仅孔缝位置会带来较大的影响.当开口平面与HPM入射方向平行时,耦合效应最弱,但此时耦合进入腔体内的能量还是很容易达到多种电子元器件的电磁损伤阈值级别. |
Author | 陈宗胜 李志刚 |
AuthorAffiliation | 国防科技大学 脉冲功率激光技术国家重点实验室,安徽 合肥,230037 |
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Author_FL | LI Zhigang CHEN Zongsheng |
Author_FL_xml | – sequence: 1 fullname: CHEN Zongsheng – sequence: 2 fullname: LI Zhigang |
Author_xml | – sequence: 1 fullname: 陈宗胜 – sequence: 2 fullname: 李志刚 |
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Keywords | 强电磁脉冲 耦合效应 开口金属腔体 |
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Title | 开口金属腔体对强电磁脉冲的耦合效应 |
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