基于重离子微束的单离子辐照系统研究
TL81; 基于北京HI-13串列加速器针孔型重离子微束装置建立了单离子辐照(SIH)系统.采用二次电子监督装置对离子注量率实时测量,将每次辐照器件的离子数严格控制为1个.通过对影响单离子辐照性能的潜在因素进行分析,给出了各因素影响单离子辐照准确性的理论参考公式.对比例系数K、束流强度和快门时间这3个主要因素进行实验检验,结果表明,在K保持稳定和较低的束流强度下,单离子系统的准确率达90%.利用该系统对28 nm SRAM芯片进行单离子辐照,获得了单离子辐照诱发多单元翻转(MCUs)的分布情况,降低了多离子入射的干扰....
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Published in | 原子能科学技术 Vol. 57; no. 10; pp. 2034 - 2040 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | Chinese |
Published |
中国原子能科学研究院,北京 102413
2023
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Subjects | |
Online Access | Get full text |
ISSN | 1000-6931 |
DOI | 10.7538/yzk.2022.youxian.0887 |
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Abstract | TL81; 基于北京HI-13串列加速器针孔型重离子微束装置建立了单离子辐照(SIH)系统.采用二次电子监督装置对离子注量率实时测量,将每次辐照器件的离子数严格控制为1个.通过对影响单离子辐照性能的潜在因素进行分析,给出了各因素影响单离子辐照准确性的理论参考公式.对比例系数K、束流强度和快门时间这3个主要因素进行实验检验,结果表明,在K保持稳定和较低的束流强度下,单离子系统的准确率达90%.利用该系统对28 nm SRAM芯片进行单离子辐照,获得了单离子辐照诱发多单元翻转(MCUs)的分布情况,降低了多离子入射的干扰. |
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AbstractList | TL81; 基于北京HI-13串列加速器针孔型重离子微束装置建立了单离子辐照(SIH)系统.采用二次电子监督装置对离子注量率实时测量,将每次辐照器件的离子数严格控制为1个.通过对影响单离子辐照性能的潜在因素进行分析,给出了各因素影响单离子辐照准确性的理论参考公式.对比例系数K、束流强度和快门时间这3个主要因素进行实验检验,结果表明,在K保持稳定和较低的束流强度下,单离子系统的准确率达90%.利用该系统对28 nm SRAM芯片进行单离子辐照,获得了单离子辐照诱发多单元翻转(MCUs)的分布情况,降低了多离子入射的干扰. |
Author | 赵勇乐 郭刚 张付强 孙浩瀚 刘建成 张峥 杨智 |
AuthorAffiliation | 中国原子能科学研究院,北京 102413 |
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Author_FL | SUN Haohan LIU Jiancheng ZHANG Fuqiang ZHANG Zheng GUO Gang YANG Zhi ZHAO Yongle |
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