InAsSb势垒阻挡型红外探测器暗电流特性研究
TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结...
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Published in | 红外与毫米波学报 Vol. 41; no. 5; pp. 810 - 817 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | Chinese |
Published |
昆明物理研究所,云南昆明650223
01.10.2022
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Subjects | |
Online Access | Get full text |
ISSN | 1001-9014 |
DOI | 10.11972/j.issn.1001-9014.2022.05.003 |
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Abstract | TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结果表明由于势垒层为p型掺杂,在吸收层形成耗尽区,导致器件中的产生复合电流并没有完全被抑制,工作温度低于180 K,器件暗电流受限于产生复合电流,工作温度高于180 K,器件暗电流受限于扩散电流. |
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AbstractList | TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结果表明由于势垒层为p型掺杂,在吸收层形成耗尽区,导致器件中的产生复合电流并没有完全被抑制,工作温度低于180 K,器件暗电流受限于产生复合电流,工作温度高于180 K,器件暗电流受限于扩散电流. |
Author | 杨文运 太云见 赵俊 陈冬琼 孔金丞 胡赞东 赵鹏 谭英 袁俊 秦强 王海澎 尚发兰 邓功荣 |
AuthorAffiliation | 昆明物理研究所,云南昆明650223 |
AuthorAffiliation_xml | – name: 昆明物理研究所,云南昆明650223 |
Author_FL | ZHAO Jun ZHAO Peng HU Zan-Dong TAI Yun-Jian SHANG Fa-Lan YUAN Jun CHEN Dong-Qiong WANG Hai-Peng TAN Ying YANG Wen-Yun DENG Gong-Rong KONG Jin-Cheng QIN Qiang |
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Author_xml | – sequence: 1 fullname: 陈冬琼 – sequence: 2 fullname: 王海澎 – sequence: 3 fullname: 秦强 – sequence: 4 fullname: 邓功荣 – sequence: 5 fullname: 尚发兰 – sequence: 6 fullname: 谭英 – sequence: 7 fullname: 孔金丞 – sequence: 8 fullname: 胡赞东 – sequence: 9 fullname: 太云见 – sequence: 10 fullname: 袁俊 – sequence: 11 fullname: 赵鹏 – sequence: 12 fullname: 赵俊 – sequence: 13 fullname: 杨文运 |
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Snippet | TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger... |
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Title | InAsSb势垒阻挡型红外探测器暗电流特性研究 |
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