InAsSb势垒阻挡型红外探测器暗电流特性研究

TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结...

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Published in红外与毫米波学报 Vol. 41; no. 5; pp. 810 - 817
Main Authors 陈冬琼, 王海澎, 秦强, 邓功荣, 尚发兰, 谭英, 孔金丞, 胡赞东, 太云见, 袁俊, 赵鹏, 赵俊, 杨文运
Format Journal Article
LanguageChinese
Published 昆明物理研究所,云南昆明650223 01.10.2022
Subjects
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ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2022.05.003

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Abstract TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结果表明由于势垒层为p型掺杂,在吸收层形成耗尽区,导致器件中的产生复合电流并没有完全被抑制,工作温度低于180 K,器件暗电流受限于产生复合电流,工作温度高于180 K,器件暗电流受限于扩散电流.
AbstractList TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger 1复合过程.讨论了势垒阻挡型器件的暗电流解析模型及暗电流抑制机理,通过在nBn吸收层的另一侧增加重掺杂的n型电极层形成nBnn+结构对吸收区内的载流子进行耗尽,吸收区少数载流子浓度降低约两个数量级,从而进一步降低器件暗电流.成功制备了InAsSb-基nBnn+器件,150 K下器件暗电流低至3×10-6 A/cm2,采用势垒结构器件的暗电流解析模型对150 K下器件的暗电流进行拟合分析,结果表明由于势垒层为p型掺杂,在吸收层形成耗尽区,导致器件中的产生复合电流并没有完全被抑制,工作温度低于180 K,器件暗电流受限于产生复合电流,工作温度高于180 K,器件暗电流受限于扩散电流.
Author 杨文运
太云见
赵俊
陈冬琼
孔金丞
胡赞东
赵鹏
谭英
袁俊
秦强
王海澎
尚发兰
邓功荣
AuthorAffiliation 昆明物理研究所,云南昆明650223
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ZHAO Peng
HU Zan-Dong
TAI Yun-Jian
SHANG Fa-Lan
YUAN Jun
CHEN Dong-Qiong
WANG Hai-Peng
TAN Ying
YANG Wen-Yun
DENG Gong-Rong
KONG Jin-Cheng
QIN Qiang
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Snippet TN215; 计算了不同温度下由辐射复合和俄歇复合决定的InAsSb材料的载流子寿命,结果表明,低温下n型InAsSb材料的载流子寿命受限于辐射复合过程,而高温下InAsSb材料的载流子寿命取决于Auger...
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StartPage 810
Title InAsSb势垒阻挡型红外探测器暗电流特性研究
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Volume 41
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