二酮吡咯并吡咯基半导体/碳量子点平面异质结光电晶体管的制备及性能研究
O472+.4%TN321+.5%TM23; 采用二酮吡咯并吡咯基半导体聚合物PDVT-10与新型碳纳米材料碳量子点(CQDs)复合,通过溶液法制备了平面异质结薄膜有机光电晶体管(OPT).PDVT-10/CQDs薄膜叠加了 PDVT-10和CQDs的光学特性,在紫外至近红外的宽频范围显示了很高的光吸收能力.相较于纯PDVT-10光电晶体管,PDVT-10/CQDs平面异质结OPT展现出更优异的宽谱光电探测性能,在450 nm激光照射下,器件的光响应度达2.6×104 A/W,比探测率达2.4× 1013 Jones,最大光灵敏度超104;在808 nm光照下,光响应度甚至高达4.4× 104...
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| Published in | 功能材料 Vol. 55; no. 9; pp. 9031 - 9039 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学技术大学研究生院科学岛分院,合肥 230026
30.09.2024
中国科学院合肥物质科学研究院强磁场科学中心,低功耗量子材料与器件安徽省重点实验室,合肥 230031%中国科学院合肥物质科学研究院强磁场科学中心,低功耗量子材料与器件安徽省重点实验室,合肥 230031 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9731 |
| DOI | 10.3969/j.issn.1001-9731.2024.09.005 |
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| Abstract | O472+.4%TN321+.5%TM23; 采用二酮吡咯并吡咯基半导体聚合物PDVT-10与新型碳纳米材料碳量子点(CQDs)复合,通过溶液法制备了平面异质结薄膜有机光电晶体管(OPT).PDVT-10/CQDs薄膜叠加了 PDVT-10和CQDs的光学特性,在紫外至近红外的宽频范围显示了很高的光吸收能力.相较于纯PDVT-10光电晶体管,PDVT-10/CQDs平面异质结OPT展现出更优异的宽谱光电探测性能,在450 nm激光照射下,器件的光响应度达2.6×104 A/W,比探测率达2.4× 1013 Jones,最大光灵敏度超104;在808 nm光照下,光响应度甚至高达4.4× 104 A/W,比探测率达1.2×1013 Jones.根据OPT光响应过程的探究,PDVT-10/CQDs异质结器件的性能提升源于界面处合适的能级排布增强了激子的解离效率、促进电荷分离,并有效减少了空穴-电子复合几率,同时PDVT-10高空穴迁移率有助于形成高效的电荷传输通路.研究为发展高性能有机光探测器件中提供了一条重要途径. |
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| AbstractList | O472+.4%TN321+.5%TM23; 采用二酮吡咯并吡咯基半导体聚合物PDVT-10与新型碳纳米材料碳量子点(CQDs)复合,通过溶液法制备了平面异质结薄膜有机光电晶体管(OPT).PDVT-10/CQDs薄膜叠加了 PDVT-10和CQDs的光学特性,在紫外至近红外的宽频范围显示了很高的光吸收能力.相较于纯PDVT-10光电晶体管,PDVT-10/CQDs平面异质结OPT展现出更优异的宽谱光电探测性能,在450 nm激光照射下,器件的光响应度达2.6×104 A/W,比探测率达2.4× 1013 Jones,最大光灵敏度超104;在808 nm光照下,光响应度甚至高达4.4× 104 A/W,比探测率达1.2×1013 Jones.根据OPT光响应过程的探究,PDVT-10/CQDs异质结器件的性能提升源于界面处合适的能级排布增强了激子的解离效率、促进电荷分离,并有效减少了空穴-电子复合几率,同时PDVT-10高空穴迁移率有助于形成高效的电荷传输通路.研究为发展高性能有机光探测器件中提供了一条重要途径. |
| Abstract_FL | In this work,planar-heterojunction organic phototransistors(OPT)have been constructed from solu-tion process,by combining a semiconducting diketopyrrolopyrrole polymer PDVT-10 and a novel carbon nano-material-carbon quantum dots(CQDs).The PDVT-10/CQDs planar heterojunction films,possessing the opti-cal properties of both PDVT-10 and CQDs,reveal strong optical absorption in a wide spectral region from ultra-violet to near infra-red.Compared with pristine PDVT-10 phototransistors,such planar-heterojunction OPTs exhibit a remarkably higher performance on broad-spectrum photo-detection,with a photoresponsivity of 2.6 × 104 A/W,a specific detectivity of 2.4× 1013 Jones,and maximum light sensitivity higher than 104 under the 450-nm laser irradiation,as well as with a responsivity of 4.4×104 A/W and a specific detectivity of 1.2×1013 Jones under the 808-nm laser irradiation.Based on the study of the photo-response mechanism for these devices,the performance improvement of the PDVT-10/CQDs based OPTs should be attributed to the favorable energy level alignment at the PDVT-10/CQDs interfaces,which enhances interfacial exciton dissociation and charge separa-tion,meanwhile effectively suppresses the hole-electron recombination in the light-absorption layer.Further-more,the formation of efficient carrier conduction pathway is benefited from high hole-mobility of PDVT-10 for the OPT performance enhancement.Our work offers a valuable avenue for the development of high performance light detectors. |
| Author | 王辉 程在天 艾志强 钱勇 周涵 张发培 |
| AuthorAffiliation | 中国科学技术大学研究生院科学岛分院,合肥 230026;中国科学院合肥物质科学研究院强磁场科学中心,低功耗量子材料与器件安徽省重点实验室,合肥 230031%中国科学院合肥物质科学研究院强磁场科学中心,低功耗量子材料与器件安徽省重点实验室,合肥 230031 |
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| Author_FL | WANG Hui QIAN Yong ZHANG Fapei CHENG Zaitian AI Zhiqiang ZHOU Han |
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| Keywords | 有机光电晶体管 平面异质结 charge separation semiconducting polymers carbon quantum dots 电荷分离 碳量子点 半导体聚合物 planar heterojunction organic phototransistor |
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