李雷, 王一, 王广, 张正丽, & 丁召. (2024). 过渡金属掺杂对二维TiSi2N4的电子结构及光学性质影响. 功能材料, 55(11), 11024-11030. https://doi.org/10.3969/j.issn.1001-9731.2024.11.004
Chicago Style (17th ed.) Citation李雷, 王一, 王广, 张正丽, and 丁召. "过渡金属掺杂对二维TiSi2N4的电子结构及光学性质影响." 功能材料 55, no. 11 (2024): 11024-11030. https://doi.org/10.3969/j.issn.1001-9731.2024.11.004.
MLA (9th ed.) Citation李雷, et al. "过渡金属掺杂对二维TiSi2N4的电子结构及光学性质影响." 功能材料, vol. 55, no. 11, 2024, pp. 11024-11030, https://doi.org/10.3969/j.issn.1001-9731.2024.11.004.
Warning: These citations may not always be 100% accurate.