祝柏林, 郑思龙, 谢挺, & 吴隽. (2021). 反应磁控溅射法制备F掺杂ZnO(FZO)薄膜的结构和透明导电性能. 材料工程, 49(11), 98-104. https://doi.org/10.11868/j.issn.1001-4381.2021.000132
Chicago Style (17th ed.) Citation祝柏林, 郑思龙, 谢挺, and 吴隽. "反应磁控溅射法制备F掺杂ZnO(FZO)薄膜的结构和透明导电性能." 材料工程 49, no. 11 (2021): 98-104. https://doi.org/10.11868/j.issn.1001-4381.2021.000132.
MLA (9th ed.) Citation祝柏林, et al. "反应磁控溅射法制备F掺杂ZnO(FZO)薄膜的结构和透明导电性能." 材料工程, vol. 49, no. 11, 2021, pp. 98-104, https://doi.org/10.11868/j.issn.1001-4381.2021.000132.
Warning: These citations may not always be 100% accurate.