Research progress of ABX-type lead-free perovskites for optoelectronic applications: materials and devices
In recent years, lead halide perovskite materials have attracted great interest and are widely used in solar cells and light-emitting devices due to their high photoelectronic quantum yield, high color purity, high defect tolerance, long diffusion length, high carrier mobility, and bandgap tunabilit...
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Published in | Physical chemistry chemical physics : PCCP Vol. 24; no. 45; pp. 27585 - 2765 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
23.11.2022
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Online Access | Get full text |
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Summary: | In recent years, lead halide perovskite materials have attracted great interest and are widely used in solar cells and light-emitting devices due to their high photoelectronic quantum yield, high color purity, high defect tolerance, long diffusion length, high carrier mobility, and bandgap tunability. However, the application of lead halide perovskites is limited due to the presence of Pb, making lead-free perovskites an important substitute due to their same crystal structure and similar properties. Although some reports have been made on lead-free perovskite materials, there are still great challenges to realize their application due to their poor stability, easy phase transition, and low photoelectric conversion efficiency. Here, we mainly summarize the development and application of ABX
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-type lead-free halide perovskite materials, especially in optoelectronic devices. The article first introduces the lattice and energy band structure, the optoelectronic properties of lead-free perovskites, including the research method of lead-free perovskites, and then analyzes the reasons for the low luminous efficiency and poor stability of lead-free perovskite materials. Second, the development history and current situation of lead-free perovskites in different optoelectronic device applications are summarized. Finally, we present the challenges and prospects for the future development of lead-free perovskites.
We summarize the development and application of ABX
3
-type lead-free halide perovskite materials, especially in optoelectronic devices. |
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Bibliography: | Chen Zhenyu received her bachelor's degree from Honghe University in 2020. She is currently studying for a master's degree at Beijing Information Science and Technology University, under the tutelage of Huang Wenqi. The research direction is silicon-based Group IV luminescent materials. Hao Wang received his bachelor's degree from Soochow University in 2020. He is currently studying for a master's degree in Electronics and Science at the Beijing Information Science and Technology University, under the tutelage of Huang Wenqi and Zhang Chunqian. His research direction is to develop efficient and stable lead-free perovskite materials and devices. Lixin Zhang received his bachelor degree (2017) and master degree (2022) at the University of Jinan Quancheng college and Beijing information science technology University. His research focuses on the application of machine learning in the band prediction of semiconductor optoelectronic materials. Shengliu Sun graduated from Beijing Information Technology University, majoring in microelectronics and solid-state electronics, and is now a hardware engineer in Beijing Jiaotong University Sino Technology Co., Ltd. Wenqi Huang received his PhD degree in Microelectronics and Solid state electronics from the University of Chinese Academy of Sciences in 2016. Since 2017, he has been an associate professor at Beijing Information Science & Technology University. His research interests include semiconductor photoelectric materials and devices, high-throughput computation and machine learning of semiconductor materials. Chunqian Zhang obtained her PhD from Institute of Semiconductors, CAS in 2015. Subsequently, she worked at Peking University as a postdoctoral researcher. Currently, she works at Beijing Information Science and Technology University as a Full Professor. Her research interests include nano optoelectronic materials and their applications. |
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d2cp02451a |