Dependence of Substrate Resistance of RF MOSFET on the Performance of LNAat 60 GHz

• Published in: International journal of computer science issues Vol. 9; no. 4; p. 277
• Main Authors: Sari, S, Balamurugan, Karthigha, Jayakumar, M
• Format: Journal Article
• Language: English
• Published: Mahebourg International Journal of Computer Science Issues (IJCSI) 01.07.2012
• Subjects: Amplifiers; Computer science; Devices; Gain; MOSFETs; Networks; Noise; Oscillators; Radio frequencies
• ISSN: 1694-0814

Operations in the 60 GHz band have many potential advantages compared to other unlicensed frequency bands including the availability of large bandwidth (7 GHz) and high-transmission power levels. In order to utilize this plentiful resource, it is necessary to study the MOSFET devices at 60 GHz for developing high efficiency low noise amplifier and oscillators. The modeling is mainly based on substrate resistance to improve the operating frequency. pi -type substrate resistance model of RF MOSFETs are used as composite model for MOSFET. In composite model, core transistor is modeled using BSIM4 and substrate network is added to it. The functionality of this composite model is verified by comparing with that of conventional MOSFET. To study the impact of substrate network, a 60 GHz LNA is constructed. Conventional LNA is designed first and later MOSFET in that LNA are replaced with composite model and comparing performances in both the cases. Within the range of designs, the impact of pi -type substrate resistance network on noise figure, maximum available gain, maximum stable gain, high frequency noise and stability characteristics of the LNA are significant and reported.