A Wideband Predictive "Double-[Formula Omitted]" Equivalent-Circuit Model for On-Chip Spiral Inductors
Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in R...
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Published in | IEEE transactions on electron devices Vol. 56; no. 4; pp. 609 - 619 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
01.04.2009
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Subjects | |
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Abstract | Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design. |
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AbstractList | A new wideband predictive "double-pi" equivalent-circuit model for on- chip spiral inductors is presented, in which the model parameters are analytically calculated with layout and process parameters. In the model, five major parasitic effects, including skin effect, proximity effect, distributed effect, substrate capacitive loss, and inductive loss, are implemented together. Considering skin effect and proximity effect simultaneously, a new equation of high-frequency resistance is proposed, and accordingly, two coupled transformer loops are developed, respectively, to calculate the network parameters of skin effect, proximity effect, and substrate inductive coupling effect independently. In order to analytically calculate substrate capacitive loss in multiturn inductors, a quasi-linear relationship between capacitive coupling effect and proximity effect is established. A series of inductors with different geometries are fabricated in two standard RFCMOS processes to verify the model. Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design. Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design. |
Author | Chen Li, Chen Li Chuan Wang, Chuan Wang Xin Zhang, Xin Zhang Ru Huang, Ru Huang Huailin Liao, Huailin Liao Waisum Wong, Waisum Wong Yangyuan Wang, Yangyuan Wang |
Author_xml | – sequence: 1 givenname: Chuan Wang surname: Chuan Wang fullname: Chuan Wang, Chuan Wang – sequence: 2 givenname: Huailin Liao surname: Huailin Liao fullname: Huailin Liao, Huailin Liao – sequence: 3 givenname: Chen Li surname: Chen Li fullname: Chen Li, Chen Li – sequence: 4 givenname: Ru Huang surname: Ru Huang fullname: Ru Huang, Ru Huang – sequence: 5 givenname: Waisum Wong surname: Waisum Wong fullname: Waisum Wong, Waisum Wong – sequence: 6 givenname: Xin Zhang surname: Xin Zhang fullname: Xin Zhang, Xin Zhang – sequence: 7 givenname: Yangyuan Wang surname: Yangyuan Wang fullname: Yangyuan Wang, Yangyuan Wang |
BookMark | eNpdT0tLAzEYDFLBtnr3GHrwlppvs9lNjqUPFSoVLHgQKdkkiylpst3d9Pe7oCcvMwzMDDMTNAoxWITugc4BqHzcr1fzjFI5AOQg8is0Bs5LIou8GKExpSCIZILdoEnXHQdZ5Hk2RvUCfzhjKxUMfmutcbp3F4tnq5gqb8nnJran5BXenVzfW_M1w-tzchflbejJ0rU6uR6_RmM9rmOLd4Esv12D3xvXKo9fgkm6j213i65r5Tt798dTtN-s98tnst09vSwXW9JwIQnnilcgmTWV5gUUALyqheAMlBCaWWqgLhSYTCkQSrGS6iGmsmI4XlelZlP08FvbtPGcbNcfTq7T1nsVbEzdgeWcZ0LKwTj7ZzzG1IZh2kHwkoHMAdgPGKZmjw |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009 |
DBID | 7SP 8FD L7M F28 FR3 |
DOI | 10.1109/TED.2009.2014184 |
DatabaseName | Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace ANTE: Abstracts in New Technology & Engineering Engineering Research Database |
DatabaseTitle | Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts Engineering Research Database ANTE: Abstracts in New Technology & Engineering |
DatabaseTitleList | Engineering Research Database Technology Research Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1557-9646 |
EndPage | 619 |
ExternalDocumentID | 2294634851 |
GroupedDBID | -~X .DC 0R~ 29I 4.4 5GY 6IK 7SP 8FD 97E AAJGR ABQJQ ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ IFIPE IPLJI JAVBF L7M LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 F28 FR3 |
ID | FETCH-LOGICAL-p589-55a5b193edbc5616115bf88531a88c3e0d1f6a1d2aa18aa370c589a26200fb7c3 |
ISSN | 0018-9383 |
IngestDate | Fri Aug 16 02:16:08 EDT 2024 Thu Oct 10 17:08:08 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 4 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-p589-55a5b193edbc5616115bf88531a88c3e0d1f6a1d2aa18aa370c589a26200fb7c3 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 857319411 |
PQPubID | 85466 |
PageCount | 11 |
ParticipantIDs | proquest_miscellaneous_34552899 proquest_journals_857319411 |
PublicationCentury | 2000 |
PublicationDate | 20090401 |
PublicationDateYYYYMMDD | 2009-04-01 |
PublicationDate_xml | – month: 04 year: 2009 text: 20090401 day: 01 |
PublicationDecade | 2000 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE transactions on electron devices |
PublicationYear | 2009 |
Publisher | The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
SSID | ssj0016442 |
Score | 1.9431704 |
Snippet | Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between... A new wideband predictive "double-pi" equivalent-circuit model for on- chip spiral inductors is presented, in which the model parameters are analytically... |
SourceID | proquest |
SourceType | Aggregation Database |
StartPage | 609 |
SubjectTerms | Mathematical models Studies |
Title | A Wideband Predictive "Double-[Formula Omitted]" Equivalent-Circuit Model for On-Chip Spiral Inductors |
URI | https://www.proquest.com/docview/857319411 https://search.proquest.com/docview/34552899 |
Volume | 56 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bb9MwFLZgvMADYlzEGAxrok9TIDcnzuPIOlWobBJkUgVCkeO4wtKUlq154ddzju1ctiJxeYkiN3Grns_fOfa5EfImVZInuJBEjUW1Mxl6GYsjj0s_WIKGi-MIE4U_niWzi_jDgi2GIHaTXbKp3sqfv80r-R-pwhjIFbNk_0Gy_aQwAPcgX7iChOH6VzLGRV2rygb8o8fFxAFNwhDM4upSeRP2fq0n7ASHjqY_Wg1fDkrGy_WVbPXGNEIz-YtH542XY9jWZ_S7Y_UNLAO7cp4eZ7vivhBbSnT9xY2joWujg9lXyDnDAb0lkfx7O4r60cKczM5aoS91P5y7DJG5HkDmXv_U3jiWyEbRLI5qA2DSyHap6ajW1hB3kIpHvJn42UgFJ5ZFt9ndFEcFRrd1RkMMUrUN5m4W0j47L08v5vOymC6Ku-ReCByU2NS-3sEEZqAtJO9-ZefB9rN3t-ff0tLG9CgekYduz0CPLQB2yR3VPCYPRpUkn5Avx7SDAh2gQA8dEL6u9Td6SLchQA0EKECAOghQCwHaQ-ApKU6nRT7zXNsMb8145jEmWAVmuaorCcZxAiZ_teRglQWCcxkpv4ZFKII6FCLgQkSpL-E1gY0J_GWVyugZ2WlWjXpOaBouM5gpliySMTPdgUTKuQqwQhKopz2y3_0zpVsW1yVnKdB6HAR75HX_KXAWOqJEo1btdRnFjOFG_8Ufn9gn9wdwvSQ7m6tWvQIrcFMdGHn-As-tWbE |
link.rule.ids | 315,783,787,27936,27937 |
linkProvider | IEEE |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Wideband+Predictive+%22Double-%5Bpi%5D+%22+Equivalent-Circuit+Model+for+On-Chip+Spiral+Inductors&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Wang%2C+Chuan&rft.au=Liao%2C+Huailin&rft.au=Chen%2C+Li&rft.au=Huang%2C+Ru&rft.date=2009-04-01&rft.issn=0018-9383&rft.volume=56&rft.issue=4&rft.spage=609&rft.epage=619&rft_id=info:doi/10.1109%2FTED.2009.2014184&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |