A Wideband Predictive "Double-[Formula Omitted]" Equivalent-Circuit Model for On-Chip Spiral Inductors

Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in R...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 56; no. 4; pp. 609 - 619
Main Authors Chuan Wang, Chuan Wang, Huailin Liao, Huailin Liao, Chen Li, Chen Li, Ru Huang, Ru Huang, Waisum Wong, Waisum Wong, Xin Zhang, Xin Zhang, Yangyuan Wang, Yangyuan Wang
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.04.2009
Subjects
Online AccessGet full text

Cover

Loading…
Abstract Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design.
AbstractList A new wideband predictive "double-pi" equivalent-circuit model for on- chip spiral inductors is presented, in which the model parameters are analytically calculated with layout and process parameters. In the model, five major parasitic effects, including skin effect, proximity effect, distributed effect, substrate capacitive loss, and inductive loss, are implemented together. Considering skin effect and proximity effect simultaneously, a new equation of high-frequency resistance is proposed, and accordingly, two coupled transformer loops are developed, respectively, to calculate the network parameters of skin effect, proximity effect, and substrate inductive coupling effect independently. In order to analytically calculate substrate capacitive loss in multiturn inductors, a quasi-linear relationship between capacitive coupling effect and proximity effect is established. A series of inductors with different geometries are fabricated in two standard RFCMOS processes to verify the model. Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design.
Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between circuit components and fabrication parameters is defined, it can precisely predict the performance of the inductors and become more flexible in RFIC design.
Author Chen Li, Chen Li
Chuan Wang, Chuan Wang
Xin Zhang, Xin Zhang
Ru Huang, Ru Huang
Huailin Liao, Huailin Liao
Waisum Wong, Waisum Wong
Yangyuan Wang, Yangyuan Wang
Author_xml – sequence: 1
  givenname: Chuan Wang
  surname: Chuan Wang
  fullname: Chuan Wang, Chuan Wang
– sequence: 2
  givenname: Huailin Liao
  surname: Huailin Liao
  fullname: Huailin Liao, Huailin Liao
– sequence: 3
  givenname: Chen Li
  surname: Chen Li
  fullname: Chen Li, Chen Li
– sequence: 4
  givenname: Ru Huang
  surname: Ru Huang
  fullname: Ru Huang, Ru Huang
– sequence: 5
  givenname: Waisum Wong
  surname: Waisum Wong
  fullname: Waisum Wong, Waisum Wong
– sequence: 6
  givenname: Xin Zhang
  surname: Xin Zhang
  fullname: Xin Zhang, Xin Zhang
– sequence: 7
  givenname: Yangyuan Wang
  surname: Yangyuan Wang
  fullname: Yangyuan Wang, Yangyuan Wang
BookMark eNpdT0tLAzEYDFLBtnr3GHrwlppvs9lNjqUPFSoVLHgQKdkkiylpst3d9Pe7oCcvMwzMDDMTNAoxWITugc4BqHzcr1fzjFI5AOQg8is0Bs5LIou8GKExpSCIZILdoEnXHQdZ5Hk2RvUCfzhjKxUMfmutcbp3F4tnq5gqb8nnJran5BXenVzfW_M1w-tzchflbejJ0rU6uR6_RmM9rmOLd4Esv12D3xvXKo9fgkm6j213i65r5Tt798dTtN-s98tnst09vSwXW9JwIQnnilcgmTWV5gUUALyqheAMlBCaWWqgLhSYTCkQSrGS6iGmsmI4XlelZlP08FvbtPGcbNcfTq7T1nsVbEzdgeWcZ0LKwTj7ZzzG1IZh2kHwkoHMAdgPGKZmjw
ContentType Journal Article
Copyright Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009
Copyright_xml – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009
DBID 7SP
8FD
L7M
F28
FR3
DOI 10.1109/TED.2009.2014184
DatabaseName Electronics & Communications Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
DatabaseTitle Technology Research Database
Advanced Technologies Database with Aerospace
Electronics & Communications Abstracts
Engineering Research Database
ANTE: Abstracts in New Technology & Engineering
DatabaseTitleList Engineering Research Database
Technology Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 1557-9646
EndPage 619
ExternalDocumentID 2294634851
GroupedDBID -~X
.DC
0R~
29I
4.4
5GY
6IK
7SP
8FD
97E
AAJGR
ABQJQ
ACGFO
ACGFS
ACIWK
ACKIV
ACNCT
AENEX
AETIX
ALMA_UNASSIGNED_HOLDINGS
ASUFR
ATWAV
B-7
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CS3
DU5
EBS
EJD
F5P
HZ~
IFIPE
IPLJI
JAVBF
L7M
LAI
M43
MS~
O9-
OCL
P2P
RIA
RIE
RIG
RNS
TAE
TN5
F28
FR3
ID FETCH-LOGICAL-p589-55a5b193edbc5616115bf88531a88c3e0d1f6a1d2aa18aa370c589a26200fb7c3
ISSN 0018-9383
IngestDate Fri Aug 16 02:16:08 EDT 2024
Thu Oct 10 17:08:08 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 4
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-p589-55a5b193edbc5616115bf88531a88c3e0d1f6a1d2aa18aa370c589a26200fb7c3
Notes ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
PQID 857319411
PQPubID 85466
PageCount 11
ParticipantIDs proquest_miscellaneous_34552899
proquest_journals_857319411
PublicationCentury 2000
PublicationDate 20090401
PublicationDateYYYYMMDD 2009-04-01
PublicationDate_xml – month: 04
  year: 2009
  text: 20090401
  day: 01
PublicationDecade 2000
PublicationPlace New York
PublicationPlace_xml – name: New York
PublicationTitle IEEE transactions on electron devices
PublicationYear 2009
Publisher The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher_xml – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
SSID ssj0016442
Score 1.9431704
Snippet Excellent agreements have been obtained between the measured data and the proposed model within a wide frequency range. Since a clear relationship between...
A new wideband predictive "double-pi" equivalent-circuit model for on- chip spiral inductors is presented, in which the model parameters are analytically...
SourceID proquest
SourceType Aggregation Database
StartPage 609
SubjectTerms Mathematical models
Studies
Title A Wideband Predictive "Double-[Formula Omitted]" Equivalent-Circuit Model for On-Chip Spiral Inductors
URI https://www.proquest.com/docview/857319411
https://search.proquest.com/docview/34552899
Volume 56
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bb9MwFLZgvMADYlzEGAxrok9TIDcnzuPIOlWobBJkUgVCkeO4wtKUlq154ddzju1ctiJxeYkiN3Grns_fOfa5EfImVZInuJBEjUW1Mxl6GYsjj0s_WIKGi-MIE4U_niWzi_jDgi2GIHaTXbKp3sqfv80r-R-pwhjIFbNk_0Gy_aQwAPcgX7iChOH6VzLGRV2rygb8o8fFxAFNwhDM4upSeRP2fq0n7ASHjqY_Wg1fDkrGy_WVbPXGNEIz-YtH542XY9jWZ_S7Y_UNLAO7cp4eZ7vivhBbSnT9xY2joWujg9lXyDnDAb0lkfx7O4r60cKczM5aoS91P5y7DJG5HkDmXv_U3jiWyEbRLI5qA2DSyHap6ajW1hB3kIpHvJn42UgFJ5ZFt9ndFEcFRrd1RkMMUrUN5m4W0j47L08v5vOymC6Ku-ReCByU2NS-3sEEZqAtJO9-ZefB9rN3t-ff0tLG9CgekYduz0CPLQB2yR3VPCYPRpUkn5Avx7SDAh2gQA8dEL6u9Td6SLchQA0EKECAOghQCwHaQ-ApKU6nRT7zXNsMb8145jEmWAVmuaorCcZxAiZ_teRglQWCcxkpv4ZFKII6FCLgQkSpL-E1gY0J_GWVyugZ2WlWjXpOaBouM5gpliySMTPdgUTKuQqwQhKopz2y3_0zpVsW1yVnKdB6HAR75HX_KXAWOqJEo1btdRnFjOFG_8Ufn9gn9wdwvSQ7m6tWvQIrcFMdGHn-As-tWbE
link.rule.ids 315,783,787,27936,27937
linkProvider IEEE
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+Wideband+Predictive+%22Double-%5Bpi%5D+%22+Equivalent-Circuit+Model+for+On-Chip+Spiral+Inductors&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Wang%2C+Chuan&rft.au=Liao%2C+Huailin&rft.au=Chen%2C+Li&rft.au=Huang%2C+Ru&rft.date=2009-04-01&rft.issn=0018-9383&rft.volume=56&rft.issue=4&rft.spage=609&rft.epage=619&rft_id=info:doi/10.1109%2FTED.2009.2014184&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon