Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25‐Based Thermoelectric Devices

• Published in: Advanced energy materials Vol. 13; no. 32
• Main Authors: Wu, Xinzhi, Lin, Yangjian, Liu, Chengyan, Han, Zhijia, Li, Huan, Wang, Yupeng, Jiang, Feng, Zhu, Kang, Ge, Binghui, Liu, Weishu
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 25.08.2023
• Subjects: Bonding strength; Chemical potential; Cutting equipment; Devices; Diffusion barriers; electrode contact interfaces; Germanium; high‐performance thermoelectric devices; interface design strategy; Interface stability; Interfaces; Mg2Sn0.75Ge0.25; Potential gradient; Silicon; Stability analysis; Thermal expansion; Thermoelectricity; Tin

Electrode contact interfaces for practical thermoelectric (TE) devices require high bonding strength, low specific contact resistivity, and superb stability. Herein, the state‐of‐the‐art Cu2MgFe/Mg2Sn0.75Ge0.25 interface is designed for Mg2Sn0.75Ge0.25‐based TE devices, adhering to the general strat...