All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors

• Published in: Advanced materials (Weinheim) Vol. 35; no. 18; pp. e2210735 - n/a
• Main Authors: Wu, Yonghuang, Xin, Zeqin, Zhang, Zhibin, Wang, Bolun, Peng, Ruixuan, Wang, Enze, Shi, Run, Liu, Yiqun, Guo, Jing, Liu, Kaihui, Liu, Kai
• Format: Journal Article
• Language: English
• Published: Weinheim Wiley Subscription Services, Inc 01.05.2023
• Subjects: Avionics; Buffer layers; Carrier mobility; Current carriers; Defects; Diffusion layers; Electrodes; Electronic devices; field‐effect transistors; Graphene; harsh‐environment resistance; interface engineering; Molybdenum disulfide; Nanotechnology devices; Oxidation; Semiconductor devices; Transistors; van der Waals electrodes
• ISSN: 0935-9648; 1521-4095; 1521-4095
• DOI: 10.1002/adma.202210735

Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject...