Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE

• Published in: Journal of applied physics Vol. 126; no. 16
• Main Authors: Moszak, K., Olszewski, W., Pucicki, D., Serafińczuk, J., Opołczyńska, K., Rudziński, M., Kudrawiec, R., Hommel, D.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 28.10.2019
• Subjects: Applied physics; Chemical etching; Dislocation density; Etching; Heterostructures; Organic chemistry; Phosphoric acid; Sodium hydroxide; Structural analysis; Threading dislocations

Selection of a suitable chemical etching method for threading dislocations density estimation is crucial for the structural characterization of epilayers grown by MOVPE and thus further for device fabrication. In this work, threading dislocations density in single layer and Al xGa 1 − xN/GaN periodi...