Mechanism‐based tuning of room‐temperature ferromagnetism in Mn‐doped β‐Ga2O3 by annealing atmosphere
Mn‐doped β‐Ga2O3 (GMO) films with room‐temperature ferromagnetism (RTFM) are synthesized by polymer‐assisted deposition, and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are investigated. The characterizations show that the concentrations of va...
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Published in | Journal of the American Ceramic Society Vol. 106; no. 1; pp. 374 - 380 |
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Abstract | Mn‐doped β‐Ga2O3 (GMO) films with room‐temperature ferromagnetism (RTFM) are synthesized by polymer‐assisted deposition, and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are investigated. The characterizations show that the concentrations of vacancy defects and Mn dopants in various valence states and lattice constants of the samples are all modulated by the annealing atmosphere. Notably, the samples annealed in air (GMO–air) exhibit a saturation magnetization as strong as 170% times that of the samples annealed in pure O2 gas (GMO–O2), which can be quantitatively explained by oxygen vacancy (VO)‐controlled ferromagnetism due to bound magnetic polarons established between delocalized hydrogenic electrons of VOs and local magnetic moments of Mn2+, Mn3+, and Mn4+ ions in the samples. Our results provide insights into mechanism‐based tuning of RTFM in Ga2O3 and may be useful for design, fabrication, and application of related spintronic materials. |
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AbstractList | Mn‐doped β‐Ga2O3 (GMO) films with room‐temperature ferromagnetism (RTFM) are synthesized by polymer‐assisted deposition, and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are investigated. The characterizations show that the concentrations of vacancy defects and Mn dopants in various valence states and lattice constants of the samples are all modulated by the annealing atmosphere. Notably, the samples annealed in air (GMO–air) exhibit a saturation magnetization as strong as 170% times that of the samples annealed in pure O2 gas (GMO–O2), which can be quantitatively explained by oxygen vacancy (VO)‐controlled ferromagnetism due to bound magnetic polarons established between delocalized hydrogenic electrons of VOs and local magnetic moments of Mn2+, Mn3+, and Mn4+ ions in the samples. Our results provide insights into mechanism‐based tuning of RTFM in Ga2O3 and may be useful for design, fabrication, and application of related spintronic materials. |
Author | Dai, Xu Xiang, Gang Zhang, Xi |
Author_xml | – sequence: 1 givenname: Xu surname: Dai fullname: Dai, Xu organization: Sichuan University – sequence: 2 givenname: Xi surname: Zhang fullname: Zhang, Xi organization: Sichuan University – sequence: 3 givenname: Gang orcidid: 0000-0002-5060-975X surname: Xiang fullname: Xiang, Gang email: gxiang@scu.edu.cn organization: Sichuan University |
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SubjectTerms | Annealing annealing atmosphere bound magnetic polaron Ferromagnetism Gallium oxides Lattice parameters Lattice vacancies Magnetic moments Magnetic saturation Manganese ions Mn‐doped Ga2O3 oxygen vacancies Physical properties room‐temperature ferromagnetism Tuning Valence |
Title | Mechanism‐based tuning of room‐temperature ferromagnetism in Mn‐doped β‐Ga2O3 by annealing atmosphere |
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