Structure and magnetic properties of highly oriented LaBaCo2O5+δ films deposited on Si wafers with Pt/Ti buffer layer

• Published in: Physical chemistry chemical physics : PCCP Vol. 21; no. 40; pp. 22390 - 22395
• Main Authors: Shaibo, Jamal, Yang, Rui, Wang, Zhe, He-Ming, Huang, Hui-Kai, He, Qing-Yu, Zhang, Guo, Xin
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 28.10.2019
• Subjects: Buffer layers; Coercivity; Crystal structure; Crystallinity; Magnetic properties; Magnetic transitions; Magnetism; Magnetoresistance; Magnetoresistivity; Oxide coatings; Pulsed laser deposition; Pulsed lasers; Silicon; Silicon wafers; Single crystals; Substrates; Thin films; Titanium; Transition metal oxides; Transition metals; Transition temperature; Wafers
• DOI: 10.1039/c9cp04484a
• ISSN: 1463-9076; 1463-9084

Fabrication of highly crystalline oxide films onto silicon wafers has long been a critical obstacle for integrating multi-functional oxides into silicon-based technology. Herein, Pt/Ti is used as a buffer layer for the integration of highly oriented crystalline LaBaCo2O5+δ (LBCO) thin films onto silicon via pulsed laser deposition. LBCO films are highly (00l) oriented with smooth and sharp LBCO/Pt interfaces. The highly oriented LBCO films exhibit a high magnetic transition temperature (TC) and large coercive field (HC) with superparamagnetism over those deposited on single crystal substrates. What is more, the metallic-like behavior with enhanced magnetoresistance is also observed. The opportunity of using a Pt/Ti buffer layer as the growth template opens an alternative route for integrating functional transition metal oxides with tunable magnetic properties into Si-based technology.