A spatial homojunction of titanium vacancies decorated with oxygen vacancies in TiO2 and its directed charge transfer

The n–p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n–p homojunction has been designed by decorating TiO2 nanosheets with Ti vacancies around nanostructured TiO2 with O vacancies. 2D 1H TQ-SQ MAS NMR...

Full description

Saved in:
Bibliographic Details
Published inNanoscale Vol. 14; no. 36; pp. 13373 - 13377
Main Authors Si-Ming, Wu, Yi-Tian, Wang, Shi-Tian, Xiao, Li-Ying, Wang, Tian, Ge, Jiang-Bo, Chen, Jia-Wen, Liu, Menny Shalom, Xiao-Yu, Yang
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 22.09.2022
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The n–p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n–p homojunction has been designed by decorating TiO2 nanosheets with Ti vacancies around nanostructured TiO2 with O vacancies. 2D 1H TQ-SQ MAS NMR, EPR and XPS show the junction of titanium vacancies and oxygen vacancies at the interface. This spatial homojunction contributes to a significant enhancement in photoelectrochemical and photocatalytic performance, especially photocatalytic seawater splitting. Density functional theory calculations of the charge density reveal the directional n–p charge transfer path at the interface, which is proposed at the atomic-/nanoscale to clarify the generation of rational junctions. The spatial n–p homojunction provides a facile strategy for the design of high-performance semiconductors.
AbstractList The n–p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n–p homojunction has been designed by decorating TiO2 nanosheets with Ti vacancies around nanostructured TiO2 with O vacancies. 2D 1H TQ-SQ MAS NMR, EPR and XPS show the junction of titanium vacancies and oxygen vacancies at the interface. This spatial homojunction contributes to a significant enhancement in photoelectrochemical and photocatalytic performance, especially photocatalytic seawater splitting. Density functional theory calculations of the charge density reveal the directional n–p charge transfer path at the interface, which is proposed at the atomic-/nanoscale to clarify the generation of rational junctions. The spatial n–p homojunction provides a facile strategy for the design of high-performance semiconductors.
The n-p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n-p homojunction has been designed by decorating TiO2 nanosheets with Ti vacancies around nanostructured TiO2 with O vacancies. 2D 1H TQ-SQ MAS NMR, EPR and XPS show the junction of titanium vacancies and oxygen vacancies at the interface. This spatial homojunction contributes to a significant enhancement in photoelectrochemical and photocatalytic performance, especially photocatalytic seawater splitting. Density functional theory calculations of the charge density reveal the directional n-p charge transfer path at the interface, which is proposed at the atomic-/nanoscale to clarify the generation of rational junctions. The spatial n-p homojunction provides a facile strategy for the design of high-performance semiconductors.The n-p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n-p homojunction has been designed by decorating TiO2 nanosheets with Ti vacancies around nanostructured TiO2 with O vacancies. 2D 1H TQ-SQ MAS NMR, EPR and XPS show the junction of titanium vacancies and oxygen vacancies at the interface. This spatial homojunction contributes to a significant enhancement in photoelectrochemical and photocatalytic performance, especially photocatalytic seawater splitting. Density functional theory calculations of the charge density reveal the directional n-p charge transfer path at the interface, which is proposed at the atomic-/nanoscale to clarify the generation of rational junctions. The spatial n-p homojunction provides a facile strategy for the design of high-performance semiconductors.
Author Shi-Tian, Xiao
Jia-Wen, Liu
Menny Shalom
Si-Ming, Wu
Li-Ying, Wang
Jiang-Bo, Chen
Tian, Ge
Xiao-Yu, Yang
Yi-Tian, Wang
Author_xml – sequence: 1
  givenname: Wu
  surname: Si-Ming
  fullname: Si-Ming, Wu
– sequence: 2
  givenname: Wang
  surname: Yi-Tian
  fullname: Yi-Tian, Wang
– sequence: 3
  givenname: Xiao
  surname: Shi-Tian
  fullname: Shi-Tian, Xiao
– sequence: 4
  givenname: Wang
  surname: Li-Ying
  fullname: Li-Ying, Wang
– sequence: 5
  givenname: Ge
  surname: Tian
  fullname: Tian, Ge
– sequence: 6
  givenname: Chen
  surname: Jiang-Bo
  fullname: Jiang-Bo, Chen
– sequence: 7
  givenname: Liu
  surname: Jia-Wen
  fullname: Jia-Wen, Liu
– sequence: 8
  fullname: Menny Shalom
– sequence: 9
  givenname: Yang
  surname: Xiao-Yu
  fullname: Xiao-Yu, Yang
BookMark eNpdz8tKAzEUBuAgFWyrG58g4MbNaO6ZLEvxBoVu6rqkmTNtyjSpScbL2zuiiLg6B_6Pw38maBRiAIQuKbmhhJvbhoVEeK21O0FjRgSpONds9LsrcYYmOe8JUYYrPkb9DOejLd52eBcPcd8HV3wMOLa4-GKD7w_41TobnIeMG3Ax2QINfvNlh-P7xxbCn9wHvPJLhm1osC-D9wncF3c7m7aAS7Iht5DO0WlruwwXP3OKnu_vVvPHarF8eJrPFtWRUVUqLolkRtUbAEY2whKpnNZMSS2MEIbRjaqlNKZ2SrTDS6wFAc42rHVc81bxKbr-vntM8aWHXNYHnx10nQ0Q-7xmmlJODCd6oFf_6D72KQztvpSShNWU8U_UCGzE
ContentType Journal Article
Copyright Copyright Royal Society of Chemistry 2022
Copyright_xml – notice: Copyright Royal Society of Chemistry 2022
DBID 7SR
7U5
8BQ
8FD
F28
FR3
JG9
L7M
7X8
DOI 10.1039/d2nr03877c
DatabaseName Engineered Materials Abstracts
Solid State and Superconductivity Abstracts
METADEX
Technology Research Database
ANTE: Abstracts in New Technology & Engineering
Engineering Research Database
Materials Research Database
Advanced Technologies Database with Aerospace
MEDLINE - Academic
DatabaseTitle Materials Research Database
Engineered Materials Abstracts
Technology Research Database
Solid State and Superconductivity Abstracts
Engineering Research Database
Advanced Technologies Database with Aerospace
ANTE: Abstracts in New Technology & Engineering
METADEX
MEDLINE - Academic
DatabaseTitleList Materials Research Database
MEDLINE - Academic
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2040-3372
EndPage 13377
GroupedDBID ---
0-7
0R~
29M
4.4
53G
705
7SR
7U5
7~J
8BQ
8FD
AAEMU
AAIWI
AAJAE
AANOJ
AARTK
AAWGC
AAXHV
ABASK
ABDVN
ABEMK
ABJNI
ABPDG
ABRYZ
ABXOH
ACGFS
ACIWK
ACLDK
ADMRA
ADSRN
AEFDR
AENEX
AENGV
AESAV
AETIL
AFLYV
AFOGI
AFRDS
AFRZK
AFVBQ
AGEGJ
AGRSR
AHGCF
AKBGW
AKMSF
ALMA_UNASSIGNED_HOLDINGS
ALUYA
ANUXI
APEMP
ASKNT
AUDPV
AZFZN
BLAPV
BSQNT
C6K
DU5
EBS
ECGLT
EE0
EF-
F28
F5P
FR3
GGIMP
H13
HZ~
H~N
J3I
JG9
L7M
O-G
O9-
OK1
P2P
RAOCF
RCNCU
RNS
RPMJG
RSCEA
RVUXY
7X8
ID FETCH-LOGICAL-p216t-35052968bee20b4a056c7726574944921b6855998c64f0062fe4ecad2fc373f63
ISSN 2040-3364
2040-3372
IngestDate Fri Jul 11 15:50:46 EDT 2025
Sun Jun 29 15:41:45 EDT 2025
IsPeerReviewed true
IsScholarly true
Issue 36
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-p216t-35052968bee20b4a056c7726574944921b6855998c64f0062fe4ecad2fc373f63
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
PQID 2716502812
PQPubID 2047485
PageCount 5
ParticipantIDs proquest_miscellaneous_2711309307
proquest_journals_2716502812
PublicationCentury 2000
PublicationDate 2022-09-22
PublicationDateYYYYMMDD 2022-09-22
PublicationDate_xml – month: 09
  year: 2022
  text: 2022-09-22
  day: 22
PublicationDecade 2020
PublicationPlace Cambridge
PublicationPlace_xml – name: Cambridge
PublicationTitle Nanoscale
PublicationYear 2022
Publisher Royal Society of Chemistry
Publisher_xml – name: Royal Society of Chemistry
SSID ssj0069363
Score 2.469782
Snippet The n–p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n–p...
The n-p homojunction design in semiconductors could enable directed charge transfer, which is promising but rarely reported. Herein, TiO2 with a spatial n-p...
SourceID proquest
SourceType Aggregation Database
StartPage 13373
SubjectTerms Charge density
Charge transfer
Density functional theory
Homojunctions
NMR spectroscopy
Oxygen
Seawater
Titanium
Titanium dioxide
Vacancies
X ray photoelectron spectroscopy
Title A spatial homojunction of titanium vacancies decorated with oxygen vacancies in TiO2 and its directed charge transfer
URI https://www.proquest.com/docview/2716502812
https://www.proquest.com/docview/2711309307
Volume 14
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9QwELaW9gIHxFMUCjISt5VL4jiv44JaKti2B7La5bSKHVtKpSaomyDgV_CTmUnsJIgKAZdod2xZq8y38_C8CHkljeSFMQEzsM5EokMmVaoZiL4o59LzVYHVyGfn0elKvN-Em9nsxyRrqW3kkfp-Y13J_3AVaMBXrJL9B84OhwIBPgN_4Qkchudf8Xgx32FCNJYz1lf1JagoZ_9h6VhVtlfzL7nq5u_u5gU6mnnj0s3rr9_g3Ml6WQHjLvgQTeiVHWzvmilpHCYBJq5N5rXmLMjmegdcHtDxsWRndkrKuh0kSsmysr9oXedWU3ZdIUf6psxrR1-W7JM7w2239xLg0mKoZvRi-9sPl3rapZbYAXajhOOYzhgEfRvzIz2lxb-KaDGBYjAVuOBi96NQrPbG7_GNqsELsLNqwatrjNjHalSALuh_frE9WS2X2-x4k90i-xwcD5Cc-4sPb96tnXaP0qCbzjf8dNfyNkhfj2f_ptg7ayW7R-5aN4MueszcJzNdPSB3Js0nH5J2QS166BQ9tDbUoYcO6KADeiiih_bomayXFUX0UEAPBfRQhx7ao4c69Dwiq5Pj7O0ps0M42GfuRw0LcNJhGiVSa-5JkYPBrODFRGEsUiFS7ssowa51iYqEwYpco4VWecGNAs6YKHhM9qq60k8I9VMlFZdhAZaT0DqRuRJ-EXIhvcIzRXpADt1b29p_2W7LwaEPwQj2-QF5OSwDkjCwlVe6brs9Pkb0vfjpn494Rm6PUD0ke811q5-DUdnIF5bPPwHwIn6Z
linkProvider Royal Society of Chemistry
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+spatial+homojunction+of+titanium+vacancies+decorated+with+oxygen+vacancies+in+TiO2+and+its+directed+charge+transfer&rft.jtitle=Nanoscale&rft.au=Si-Ming%2C+Wu&rft.au=Yi-Tian%2C+Wang&rft.au=Shi-Tian%2C+Xiao&rft.au=Li-Ying%2C+Wang&rft.date=2022-09-22&rft.pub=Royal+Society+of+Chemistry&rft.issn=2040-3364&rft.eissn=2040-3372&rft.volume=14&rft.issue=36&rft.spage=13373&rft.epage=13377&rft_id=info:doi/10.1039%2Fd2nr03877c&rft.externalDBID=NO_FULL_TEXT
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2040-3364&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2040-3364&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2040-3364&client=summon