Anisotropic reactive ion etching of aluminium using Cl2, BCl3, and CH4 gases
A technique for anisotropically etching fine line patterns in Al films using the gas combination Cl2:BCl3:CH4 is explored. The process is designed to avoid the use of CCl4 and CHCl3, both of which are known to be strong carcinogens. The etch is characterized by making use of statistically designed e...
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Published in | Journal of the Electrochemical Society Vol. 137; no. 1; pp. 249 - 252 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Pennington, NJ
Electrochemical Society
1990
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Subjects | |
Online Access | Get full text |
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