Anisotropic reactive ion etching of aluminium using Cl2, BCl3, and CH4 gases

A technique for anisotropically etching fine line patterns in Al films using the gas combination Cl2:BCl3:CH4 is explored. The process is designed to avoid the use of CCl4 and CHCl3, both of which are known to be strong carcinogens. The etch is characterized by making use of statistically designed e...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 137; no. 1; pp. 249 - 252
Main Authors LUTZE, J. W, PERERO, A. H, KRUSIUS, J. P
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 1990
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